파트넘버.co.kr JCS2N60C 데이터시트 PDF


JCS2N60C 반도체 회로 부품 판매점

N-CHANNEL MOSFET



JILIN SINO-MICROELECTRONICS 로고
JILIN SINO-MICROELECTRONICS
JCS2N60C 데이터시트, 핀배열, 회로
N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS2N60
主要参数 MAIN CHARACTERISTICS
ID 2.0 A
VDSS 600 V
Rdson@Vgs=10V5 Ω
Qg 15.3 nC
封装 Package
用途
高频开关电源
电子镇流器
LED 电源
APPLICATIONS
High frequency switching
mode power supply
Electronic ballast
LED power supply
产品特性
低栅极电荷
CrssB B (典型值 7.6pF)
开关速度快
产品全部经过雪崩测试
高抗 dv/dt 能力
RoHS 产品
FEATURES
Low gate charge
Low CrssB B (typical 7.6pF )
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
封装
Package
无卤素
Halogen Free
JCS2N60V-O-V-N-B
JCS2N60R-O-R-N-B
JCS2N60R-O-R-N-A
JCS2N60C-O-C-N-B
JCS2N60F-O-F-N-B
JCS2N60V-R-V-N-B
JCS2N60V
JCS2N60R
JCS2N60R
JCS2N60C
JCS2N60F
JCS2N60V
IPAK
DPAK
DPAK
TO-220C
TO-220MF
IPAK
NO
NO
NO
NO
NO
YES
包装
Packaging
条管 Tube
条管 Tube
编带 Reel
条管 Tube
条管 Tube
条管 Tube
器件重量
Device
Weight
0.35 g(typ)
0.30 g(typ)
0.30 g(typ)
2.15 g(typ)
2.20 g(typ)
0.35 g(typ)
版本:201501F
1/12


JCS2N60C 데이터시트, 핀배열, 회로
R
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
项目
Parameter
符号
Symbol
数 值 Value
JCS2N60V/R JCS2N60C
最高漏极-源极直流电
Drain-Source Voltage
VDSSB B
600
连续漏极电流
Drain
Current-continuous
IDB
T=25
B
T=100
1.9
1.1
2.0
1.3
最大脉冲漏极电流(注 1
Drain Current pulse IDMB B
note 1
6.0
最高栅源电压
Gate-Source Voltage
VGSSB B
±30
单脉冲雪崩能量(注 2
Single Pulsed
Avalanche
Energynote 2
EASB B
120
雪崩电流(注 1
Avalanche
Current(note 1)
IARB B
2.0
重复雪崩能量(注 1
Repetitive Avalanche
Energy note 1
EARB B
5.4
二极管反向恢复最大电
压变化速率(注 3
Peak Diode Recovery
Dv/dt note 3
dv/dt
5.5
耗散功率
Power Dissipation
P T =25D CB B B B
-Derate
above 25
44
0.35
54
0.43
最高结温及存储温度
Operating and Storage
T TJ STGB B
BB
Temperature Range
-55+150
引线最高焊接温度
Maximum Lead
Temperature for
TLB B
300
Soldering Purposes
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
JCS2N60
JCS2N60F
Unit
V
2.0* A
1.3* A
6.0* A
V
mJ
A
mJ
V/ns
23 W
0.18 W/
版本:201501F
2/12




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JCS2N60C mosfet

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