Si9926CDY 반도체 회로 부품 판매점
Dual N-Channel 20 V (D-S) MOSFET
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Dual N-Channel 20-V (D-S) MOSFET
Si9926CDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.018 at VGS = 4.5 V
20
0.022 at VGS = 2.5 V
ID (A)a
8
8
Qg (Typ.)
10 nC
SO-8
S1 1
G1 2
S2 3
G2 4
Top View
8 D1
7 D1
6 D2
5 D2
Ordering Information: Si9926CDY-T1-E3 (Lead (Pb)-free)
Si9926CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter
- Game Machine
- PC
D1
D2
G1
S1
N-Channel MOSFET
G2
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
20
± 12
8a
8a
8a, b, c
6.7b, c
30
2.6
1.7b, c
5
1.25
3.1
2
2b, c
1.3b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Package limited, TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typical
50
32
Maximum
62.5
40
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 68606
S09-0704-Rev. B, 27-Apr-09
www.vishay.com
1
Si9926CDY
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS /TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 4.5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 8.3 A
VGS = 2.5 V, ID = 4.5 A
Forward Transconductancea
Dynamicb
gfs VDS = 10 V, ID = 8.3 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 10 V, VGS = 10 V, ID = 8.3 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 10 V, VGS = 4.5 V, ID = 8.3 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-on Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 10 V, RL = 1.5 Ω
ID ≅ 6.7 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-on Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 10 V, RL = 1.5 Ω
ID ≅ 6.7 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = 6.7 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 6.7 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Min.
20
0.6
30
Typ. Max. Unit
25
- 4.0
0.015
0.017
45
V
1.5
± 100
1
10
0.018
0.022
mV/°C
V
nA
µA
A
Ω
S
1200
220
100
22
10
2.5
1.7
2.4
15
10
35
12
10
12
25
10
33
15
25
15
55
20
15
20
40
15
pF
nC
Ω
ns
2.6
A
30
0.8 1.2
V
20 40 ns
10 20 nC
10
ns
10
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 68606
S09-0704-Rev. B, 27-Apr-09
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