SiA466EDJ 반도체 회로 부품 판매점
N-Channel 20 V (D-S) MOSFET
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 Vishay |
www.vishay.com
SiA466EDJ
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω) MAX.
0.0095 at VGS = 10 V
0.0111 at VGS = 6 V
0.0130 at VGS = 4.5 V
ID (A) a
25
25
25
PowerPAK® SC-70-6L Single
D
D6
S5
4
Qg (TYP.)
6.3 nC
S
1 2.05 mm
Top View
2
3D
G
Bottom View
1
D
Marking Code: AW
Ordering Information:
SiA466EDJ-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® power MOSFET
• Thermally enhanced PowerPAK® SC-70 package
- Small footprint area
- Low on-resistance
• Typical ESD protection: 2500 V (HBM)
• 100 % Rg Tested
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• For smart phones and mobile
computing
- DC/DC converters
- Power management
- Load switches
G
D
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) a
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
LIMIT
20
± 20
25 a
25 a
15.1 b, c
12.1 b, c
50
16
2.9 b, c
19.2
12.3
3.5 b, c
2.2 b, c
-55 to 150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
28
5.3
36
°C/W
6.5
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S14-1065-Rev. A, 19-May-14
1
Document Number: 62955
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SiA466EDJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic b
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VDS = 0 V, VGS = ± 4.5 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS ≤ 5 V, VGS = 4.5 V
VGS = 10 V, ID = 9 A
VGS = 6 V, ID = 5 A
VGS = 4.5 V, ID = 5 A
VDS = 10 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 1 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 15 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
VDS = 10 V, VGS = 4.5 V, ID = 15 A
f = 1 MHz
VDD = 10 V, RL = 1 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
VDD = 10 V, RL = 1 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = 10 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited
MIN.
20
-
-
1
-
-
-
-
20
-
-
-
-
-
-
-
-
-
-
-
0.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
17
-4.7
-
-
-
-
-
-
0.0079
0.0095
0.0104
38
-
-
-
2.5
± 30
±1
1
10
-
0.0095
0.0111
0.0130
-
V
mV/°C
V
μA
A
Ω
S
620 -
230 -
pF
135 -
13 20
6.3 10
nC
1.6 -
2.1 -
0.9 1.8
Ω
5 10
22 33
12 20
6 12
ns
15 23
73 110
12 20
20 30
- 16
A
- 50
0.8 1.2
V
22 33 ns
10 15 nC
11 -
ns
11 -
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-1065-Rev. A, 19-May-14
2
Document Number: 62955
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SiA466EDJ mosfet
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