SM4364NAKP 반도체 회로 부품 판매점
N-Channel Enhancement Mode MOSFET
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 Sinopower |
SM4364NAKP
Features
• 30V/60A,
RDS(ON)=5.7mΩ (Max.) @ VGS=10V
RDS(ON)=7.6mΩ (Max.) @ VGS=4.5V
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDDD
S S SG
DFN5x6-8
(5,6,7,8)
DD DD
Pin 1
Applications
• Power Management in Desktop Computer or
DC/DC Converters.
(4) G
Ordering and Marking Information
SSS
( 1, 2, 3 )
N-Channel MOSFET
SM4364NA
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM4364NA KP :
SM4364A
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.5 - October, 2014
1
www.sinopowersemi.com
SM4364NAKP
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VD S S
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
IDP Pulse Drain Current Tested
ID a Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Steady State
30
±20
150
-55 to 150
20
140
90
60*
48
50
20
2.5
V
°C
°C
A
A
A
W
°C/W
RθJA Thermal Resistance-Junction to Ambient
t ≤ 10s
Steady State
15 °C/W
45
IAS b Avalanche Current, Single pulse
L=0.1mH
L=0.3mH
30
22 A
L=0.5mH
20
EAS b Avalanche Energy, Single pulse
L=0.1mH
L=0.3mH
45
72 mJ
L=0.5mH
100
Note a：* Current limited by bond wire.
Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.5 - October, 2014
2
www.sinopowersemi.com
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( sinopower )
SM4364NAKP mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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