SiA533EDJ 반도체 회로 부품 판매점
N- and P-Channel 12-V (D-S) MOSFET
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New Product
SiA533EDJ
Vishay Siliconix
N- and P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.034 at VGS = 4.5 V
0.040 at VGS = 2.5 V
N-Channel 12
0.050 at VGS = 1.8 V
0.070 at VGS = 1.5 V
0.059 at VGS = - 4.5 V
P-Channel
0.081at VGS = - 2.5 V
- 12
0.115 at VGS = - 1.8 V
0.215 at VGS = - 1.5 V
ID (A)
4.5a
4.5a
4.5a
4.5a
- 4.5a
- 4.5a
- 4.5a
- 1.5
Qg (Typ.)
5.6 nC
7.8 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Typical ESD Protection: N-Channel 1500 V
P-Channel 1000 V
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
• DC/DC Converters
PowerPAK® SC-70-6 Dual
1
S1
D1
D1
6
G2
5
2.05 mm
S2
4
2
G1
D2
3
D2
2.05 mm
Marking Code
Part # code
EHX
XXX
Lot Traceability
and Date code
Ordering Information: SiA533EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 S2
G1
G2
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 12
- 12
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VGS
ID
4.5a
4.5a
4.5a, b, c
4.5a, b, c
±8
- 4.5a
- 4.5a
- 4.5a, b, c
- 3.7b, c
Pulsed Drain Current
Source Drain Current Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
IDM
IS
20
4.5a
1.6b, c
7.8
- 15
- 4.5a
- 1.6b, c
7.8
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
5
1.9b, c
1.2b, c
5
1.9b, c
1.2b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150
260
Unit
V
A
W
°C
Document Number: 65706
S10-0214-Rev. A, 25-Jan-10
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SiA533EDJ
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
52 65 52 65
12.5 16 12.5 16
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
ID = 250 µA
ID = - 250 µA
ID = 250 µA
ID = - 250 µA
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 4.5 V
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
IDSS
ID(on)
RDS(on)
gfs
VDS = 12 V, VGS = 0 V
VDS = - 12 V, VGS = 0 V
VDS = 12 V, VGS = 0 V, TJ = 55 °C
VDS = - 12 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 4.5 V
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 4.6 A
VGS = - 4.5 V, ID = - 3.6 A
VGS = 2.5 V, ID = 4.2 A
VGS = - 2.5 V, ID = - 3.1 A
VGS = 1.8 V, ID = 3.8 A
VGS = - 1.8 V, ID = - 2.6 A
VGS = 1.5 V, ID = 1.5 A
VGS = - 1.5 V, ID = - 0.5 A
VDS = 6 V, ID = 4.6 A
VDS = - 6 V, ID = - 3.6 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 6 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 6 V, VGS = 0 V, f = 1 MHz
Min. Typ. Max. Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
12
- 12
0.4
- 0.4
10
- 10
V
19
- 5.7
- 2.7
1.7
mV/°C
1.0
- 1.0
± 0.5
± 0.5
±5
±5
1
-1
10
- 10
V
µA
A
0.028
0.048
0.032
0.066
0.038
0.093
0.045
0.120
21
11
420
545
100
192
62
175
0.034
0.059
0.040
0.081
0.050
0.115
0.070
0.215
Ω
S
pF
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Document Number: 65706
S10-0214-Rev. A, 25-Jan-10
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SiA533EDJ mosfet
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