SiA517DJ 반도체 회로 부품 판매점
N- and P-Channel 12-V (D-S) MOSFET
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 Vishay |
SiA517DJ
Vishay Siliconix
N- and P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel
P-Channel
VDS (V)
12
- 12
RDS(on) ()
0.029 at VGS = 4.5 V
0.034 at VGS = 2.5 V
0.044 at VGS = 1.8 V
0.065 at VGS = 1.5 V
0.061 at VGS = - 4.5 V
0.081 at VGS = - 2.5 V
0.115 at VGS = - 1.8 V
0.170 at VGS = - 1.5 V
ID (A)
4.5a
4.5a
4.5a
4.5a
- 4.5a
- 4.5a
- 4.5a
- 4.5a
Qg (Typ.)
5.6 nC
8.2 nC
PowerPAK SC-70-6 Dual
FEATURES
• TrenchFET® Power MOSFETs
• Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Load Switch for Portable Devices
1
S1
2
G1
D1
3
D2
D1
6
D2
G2
5
2.05 mm S2
4
2.05 mm
Marking Code
Part # code
EEX
XXX
Lot Traceability
and Date Code
Ordering Information: SiA517DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 S2
G2
G1
S1 D2
N-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
12 - 12
±8
4.5a - 4.5a
4.5a - 4.5a
4.5a, b, c
- 4.3b, c
4.5a, b, c
- 3.8b, c
20
4.5a
1.6b, c
- 15
- 4.5a
- 1.6b, c
6.5 6.5
5
1.9b, c
1.2b, c
5
1.9b, c
1.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
52 65 52 65
12.5 16 12.5 16
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
Document Number: 64832
For technical questions, contact:: [email protected]
www.vishay.com
S13-0463-Rev. B, 04-Mar-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA517DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VDS/TJ
ID = 250 µA
ID = - 250 µA
VGS(th) Temperature Coefficient
VGS(th)/TJ
ID = 250 µA
ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 12 V, VGS = 0 V
VDS = - 12 V, VGS = 0 V
VDS = 12 V, VGS = 0 V, TJ = 55 °C
VDS = - 12 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VDS - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 5 A
VGS = - 4.5 V, ID = - 3.6 A
VGS = 2.5 V, ID = 4.6 A
VGS = - 2.5 V, ID = - 3.2 A
VGS = 1.8 V, ID = 4.1 A
VGS = - 1.8 V, ID = - 1 A
VGS = 1.5 V, ID = 2 A
VGS = - 1.5 V, ID = - 1 A
VDS = 10 V, ID = 5 A
VDS = - 10 V, ID = - 3.6 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 6 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 6 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 6 V, VGS = 8 V, ID = 6.5 A
Qg VDS = - 6 V, VGS = - 8 V, ID = - 4.5 A
N-Channel
VDS = 6 V, VGS = 4.5 V, ID = 6.5 A
Qgs
P-Channel
Qgd VDS = - 6 V, VGS = - 4.5 V, ID = - 4.3 A
Gate Resistance
Rg
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
12
- 12
0.4
- 0.4
15
- 10
0.7
2
Typ. Max. Unit
V
12
- 3.1
- 2.5
2.4
mV/°C
1
-1
± 100
± 100
1
-1
10
- 10
V
nA
µA
A
0.024
0.050
0.028
0.066
0.032
0.093
0.042
0.112
21
11
0.029
0.061
0.034
0.081
0.044
0.115
0.065
0.170
S
500
590
160
280
100
250
9.7 15
13.1 20
5.6 8.5
8.2 12.5
0.72
1.2
0.74
2.8
3.5 7
10 20
pF
nC
www.vishay.com
For technical questions, contact:: [email protected]
Document Number: 64832
2 S13-0463-Rev. B, 04-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SiA517DJ mosfet
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