ALD110904 반도체 회로 부품 판매점
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
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 Advanced Linear Devices |
ADVANCED
LINEAR
DEVICES, INC.
e TM
EPAD
ENA
®
B
L
E
D
ALD110804/ALD110904
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®
PRECISION MATCHED PAIR MOSFET ARRAY
VGS(th)= +0.40V
GENERAL DESCRIPTION
ALD110804/ALD110904 are high precision monolithic quad/dual enhance-
ment mode N-Channel MOSFETS matched at the factory using ALD’s
proven EPAD® CMOS technology. These devices are intended for low
voltage, small signal applications. The ALD110804/ALD110904 MOSFETS
are designed and built for exceptional device electrical characteristics
matching. Since these devices are on the same monolithic chip, they also
exhibit excellent tempco tracking characteristics. They are versatile circuit
elements useful as design components for a broad range of analog appli-
cations, such as basic building blocks for current sources, differential am-
plifier input stages, transmission gates, and multiplexer applications. For
most applications, connect the V- and IC pins to the most negative volt-
age in the system and the V+ pin to the most positive voltage. All other
pins must have voltages within these voltage limits at all times.
The ALD110804/ALD110904 devices are built for minimum offset voltage
and differential thermal response, and they are suited for switching and
amplifying applications in <+0.1V to +10V systems where low input bias
current, low input capacitance and fast switching speed are desired, as
these devices exhibit well controlled turn-off and sub-threshold character-
istics and can be biased and operated in the sub-threshold region. Since
these are MOSFET devices, they feature very large (almost infinite) cur-
rent gain in a low frequency, or near DC, operating environment.
The ALD110804/ALD110904 are suitable for use in very low operating
voltage or very low power (nanowatt), precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result from extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 30pA at room temperature. For example, DC beta of the de-
vice at a drain current of 3mA and input leakage current of 30pA at 25°C
is = 3mA/30pA = 100,000,000.
FEATURES
• Enhancement-mode (normally off)
• Precision Gate Threshold Voltage of +0.40V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th) match (VOS) to 10mV
• High input impedance — 1012Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
16-Pin
SOIC
Package
16-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
ALD110804SCL ALD110804PCL ALD110904SAL ALD110904PAL
* Contact factory for industrial temp. range or user-specified threshold voltage values.
APPLICATIONS
• Ultra low power (nanowatt) analog and digital
circuits
• Ultra low operating voltage(<0.40V) circuits
• Sub-threshold biased and operated circuits
• Precision current mirrors and current sources
• Nano-Amp current sources
• High impedance resistor simulators
• Capacitive probes and sensor interfaces
• Differential amplifier input stages
• Discrete Voltage comparators and level shifters
• Voltage bias circuits
• Sample and Hold circuits
• Analog and digital inverters
• Charge detectors and charge integrators
• Source followers and High Impedance buffers
• Current multipliers
• Discrete Analog switches / multiplexers
PIN CONFIGURATION
ALD110804
V-
IC* 1
V-
16 IC*
GN1
DN1
S12
V-
DN4
GN4
IC*
2
M1
3
4
5 V-
6 M4
7
8 V-
M2
V+
15 GN2
14 DN2
13 V+
12 S34
M 3 11 DN3
10 GN3
V- 9 IC*
SCL, PCL PACKAGES
ALD110904
V-
IC* 1
V-
8 IC*
GN1 2
DN1 3
S12 4
M1 M2
V-
7 GN2
6 DN2
5 V-
SAL, PAL PACKAGES
*IC pins are internally connected.
Connect to V-
Rev 2.2 ©2014 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
10.6V
10.6V
500 mW
Operating temperature range SCL, PCL, SAL, PAL package
0°C to +70°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = GND TA = 25°C unless otherwise specified
Parameter
Gate Threshold Voltage
Offset Voltage
VGS(th)1-VGS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
Symbol
VGS(th)
VOS
TCVOS
TCVGS(th)
On Drain Current
IDS (ON)
Forward Transconductance
GFS
Transconductance Mismatch
Output Conductance
∆GFS
GOS
Drain Source On Resistance
RDS (ON)
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current1
∆RDS (ON)
BVDSX
IDS (OFF)
Gate Leakage Current1
IGSS
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
CISS
CRSS
ton
toff
Notes: 1 Consists of junction leakage currents
ALD110804/ALD110904
Min Typ
Max
0.38 0.40
2
0.42
10
5
-1.7
0.0
+1.6
12.0
3.0
1.4
1.8
68
500
0.5
10
10 400
4
3 200
1
2.5
0.1
10
10
60
ALD110804/ALD110904
Advanced Linear Devices
Unit
V
mV
Test Conditions
IDS = 1µA, VDS = 0.1V
µV/ °C
mV/ °C
VDS1 = VDS2
ID = 1µA, VDS = 0.1V
ID = 20µA, VDS = 0.1V
ID = 40µA, VDS = 0.1V
mA VGS = +9.9V, VDS = +5V
VGS = +4.4V, VDS = +5V
mmho
VGS = +4.4V
VDS = +9.4V
%
µmho
Ω
%
VGS = +4.4V
VDS = +9.4V
VDS = +0.1V
VGS = +4.4V
V IDS = 1.0µA
VGS = -0.6V
pA VGS = -0.6V, VDS =+5V
V- = -5V
nA TA = 125°C
pA VDS = 0V, VGS = 5V
nA TA =125°C
pF
pF
ns V+ = 5V, RL= 5KΩ
ns V+ = 5V, RL= 5KΩ
dB f = 100KHz
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ALD110904 mosfet
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