AP2315GEN-HF-3 반도체 회로 부품 판매점
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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 Advanced Power Electronics |
Advanced Power
Electronics Corp.
AP2315GEN-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Small Package Outline
Surface Mount Device
RoHS-compliant, halogen-free
D
BV DSS
-30V
G
R DS(ON)
1.25Ω
S ID
-0.84A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP2315GEN-HF-3 is in the popular SOT-23 small surface-mount package
which is widely used in commercial and industrial applications where a small
board footprint is required.
This device is well suited for use in low current applications such as
load switches and DC-DC converters.
D
SOT-23
S
G
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TA =25°C
ID at TA= 70°C
IDM
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
±16
-840
-670
-2.5
0.69
-55 to 150
-55 to 150
Units
V
V
mA
mA
A
W
°C
°C
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Value
180
Unit
°C/W
Ordering Information
AP2315GEN-HF-3TR : in RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel
©2011 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200710223-3 1/5
Advanced Power
Electronics Corp.
AP2315GEN-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
∆ BV DSS/∆ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
Static Drain-Source On-Resistance VGS=-10V, ID=-0.8A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=-4.5V, ID=-0.5A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-0.8A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS=±16V
ID=-0.8A
VDS=-25V
VGS=-4.5V
VDS=-15V
ID=-0.8A
RG=3.3Ω , V GS=-10V
RD=18.8Ω
VGS=0V
VDS=-25V
f=1.0MHz
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=-1.1A, VGS=0V
IS=-0.8A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-30 - - V
- -0.1 - V/°C
- - 1.25 Ω
- - 2.4 Ω
-1 - -3 V
- 880 - mS
- - -1 uA
- - -25 uA
- - ±30 uA
- 1 1.6 nC
- 0.6 - nC
- 0.4 - nC
- 10 - ns
- 8 - ns
- 22 - ns
- 17 - ns
- 30 50 pF
- 15 - pF
- 10 - pF
Min. Typ. Max. Units
- - -1.3 V
- 27 - ns
- 30 - nC
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test - pulse width < 300µs , duty cycle < 2%
3. Surface mounted on 1in2 copper pad of FR4 board, t <10sec; 400°C/W when mounted on minimum copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2011 Advanced Power Electronics Corp. USA
www.a-powerusa.com
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제조업체: Advanced Power Electronics
( ape )
AP2315GEN-HF-3 mosfet
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[ AP2315GEN-HF-3.PDF ]
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