AP11S60I-HF-3 반도체 회로 부품 판매점
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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 Advanced Power Electronics |
Advanced Power
Electronics Corp.
AP11S60I-HF-3
N-channel Enhancement-mode Power MOSFET
Fully isolated package
Simple Drive Requirement
Fast Switching Performance
RoHS-compliant, halogen-free
G
D
S
BV DSS
RDS(ON)
ID
600V
0.37Ω
11A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP11S60I-HF-3 is in the TO-220CFM isolated through-hole package
which is widely used in commercial and industrial applications where a
small PCB footprint or an attached isolated heatsink is required.
This device is well suited for use in high voltage applications such as
off-line AC/DC converters.
G
D S TO-220CFM (I)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
±20
11
6.9
22
36.7
1.92
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
3.4
65
Units
°C/W
°C/W
Ordering Information
AP11S60I-HF-3TB : in RoHS-compliant halogen-free TO-220CFM, shipped in tubes (50pcs/tube, 1000pcs/box)
©2013 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201301113-3 1/5
Advanced Power
Electronics Corp.
AP11S60I-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Parameter
Test Conditions
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=3.7A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=10V, ID=5A
VDS=480V, VGS=0V
VGS=±20V, VDS=0V
ID=5A
VDS=480V
VGS=10V
VDD=300V
ID=5A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=5A, VGS=0V
IS=5A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
600 - - V
- - 0.37 Ω
2 - 4V
- 10 -
S
- - 25 uA
- - ±100 nA
- 38 61 nC
- 6.5 - nC
- 19 - nC
- 11 - ns
- 13 - ns
- 49 - ns
- 17 - ns
- 1065 1704 pF
- 625 - pF
- 5 - pF
- 4.6 9.2 Ω
Min. Typ. Max. Units
- 0.8 -
V
- 260 - ns
- 3.8 - µC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse width <300us, duty cycle < 2%
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2013 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/5
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( ape )
AP11S60I-HF-3 mosfet
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