AP40T10GP-HF-3 반도체 회로 부품 판매점
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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 Advanced Power Electronics |
Advanced Power
Electronics Corp.
AP40T10GP-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Low On-resistance
D
Fast Switching Performance
RoHS-compliant, halogen-free
G
S
BV DSS
RDS(ON)
ID
105V
35mΩ
39A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP40T10GP-HF-3 is in the TO-220 package, which is widely used
for commercial and industrial applications, and is well-suited for
low voltage applications such as DC/DC converters and motor drives.
The TO-220 through-hole package is often used where a small PCB
footprint or an attached heatsink is required.
G
D
S
Absolute Maximum Ratings
TO-220 (P)
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current,
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Rating
105
±20
39
27
80
125
-55 to 175
-55 to 175
Value
1.2
62
Units
V
V
A
A
A
W
°C
°C
Units
°C/W
°C/W
Ordering Information
AP40T10GP-3TB
RoHS-compliant TO-220, shipped in tubes
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200711071-3 1/5
Advanced Power
Electronics Corp.
AP40T10GP-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=125oC)
IGSS Gate-Source Leakage
Qg Total Gate Charge2
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time2
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Source-Drain Diode
Test Conditions
VGS=0V, ID=1mA
VGS=10V, ID=15A
VGS=6V, ID=10A
VDS=VGS, ID=250uA
VDS=15V, ID=15A
VDS=100V, VGS=0V
VDS=80V ,VGS=0V
VGS=±20V
ID=40A
VDS=50V
VGS=10V
VDS=50V
ID=40A
RG=2.5Ω , VGS=10V
RD=1.25Ω
VGS=0V
VDS=25V
f=1.0MHz
Min. Typ. Max. Units
105 - - V
- - 35 mΩ
- - 38 mΩ
2 - 4V
- 14.5 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 24 40 nC
- 5.4 - nC
- 9.6 - nC
- 9 - ns
- 64 - ns
- 19 - ns
- 75 - ns
- 1310 2100 pF
- 270 - pF
- 85 - pF
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 60 - ns
- 125 - nC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse test - pulse width < 300µs , duty cycle < 2%
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
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( ape )
AP40T10GP-HF-3 mosfet
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[ AP40T10GP-HF-3.PDF ]
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