IRFU3708PBF 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 International Rectifier |
PD - 95071A
SMPS MOSFET
IRFR3708PbF
IRFU3708PbF
Applications
l High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
HEXFET® Power MOSFET
VDSS
30V
RDS(on) max
12.5mΩ
ID
61A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3708
I-Pak
IRFU3708
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 12
61
51
244
87
61
0.58
-55 to + 175
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Max.
1.73
50
110
Units
V
V
A
W
W
W/°C
°C
Units
°C/W
Notes through are on page 9
www.irf.com
1
12/13/04
IRFR/U3708PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
30
–––
–––
–––
–––
0.6
–––
0.028
8.5
10.0
15.0
–––
––– V
––– V/°C
12.5
14.0 mΩ
30.0
2.0 V
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
VGS = 2.8V, ID = 7.5A
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 24V, VGS = 0V
––– ––– 100
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
200
nA
VGS = 12V
––– ––– -200
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
49 ––– –––
––– 24 –––
––– 6.7 –––
––– 5.8 –––
––– 14 21
––– 7.2 –––
––– 50 –––
––– 17.6 –––
––– 3.7 –––
––– 2417 –––
––– 707 –––
––– 52 –––
S VDS = 15V, ID = 50A
ID = 24.8A
nC VDS = 15V
VGS = 4.5V
VGS = 0V, ID = 24.8A, VDS = 15V
VDD = 15V
ns ID = 24.8A
RG = 0.6Ω
VGS = 4.5V
VGS = 0V
VDS = 15V
pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
213
62
Units
mJ
A
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.88
0.80
41
64
43
70
Max. Units
61
244
A
1.3 V
–––
62 ns
96 nC
65 ns
105 nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 31A, VGS = 0V
TJ = 125°C, IS = 31A, VGS = 0V
TJ = 25°C, IF = 31A, VR=20V
di/dt = 100A/µs
TJ = 125°C, IF = 31A, VR=20V
di/dt = 100A/µs
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( ir )
IRFU3708PBF mosfet
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국내 전력반도체 판매점
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