FDW2503NZ 반도체 회로 부품 판매점
Dual N-Channel 2.5V Specified PowerTrench MOSFET
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 Fairchild Semiconductor |
October 2001
FDW2503NZ
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Features
• 5.5 A, 20 V. RDS(ON) = 20 mΩ @ VGS = 4.5V
RDS(ON) = 26 mΩ @ VGS = 2.5V
• Extended VGSS range (±12V) for battery applications
• ESD protection diode (note 3)
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
18
27
36
45
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2503NZ
FDW2503NZ
13’’
©2001 Fairchild Semiconductor Corporation
Ratings
20
±12
5.5
30
1.0
0.6
–55 to +150
100
125
Units
V
V
A
W
°C
°C/W
Tape width
12mm
Quantity
3000 units
FDW2503NZ Rev C(W)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA
20
V
∆BV DSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
14
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
1 µA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V, VDS = 0 V
10 µA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V, VDS = 0 V
–10 µA
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
∆V GS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
0.6 1.0 1.5
V
ID = 250 µA, Referenced to 25°C
–3
mV/°C
VGS = 4.5 V, ID = 5.5 A
VGS = 2.5 V, ID = 5 A
VGS = 4.5 V, ID = 5.5 A, TJ=125°C
14 20 mΩ
19 26
19 29
VGS = 4.5 V, VDS = 5 V
30
A
VDS = 5 V,
ID = 5.5 A
30 S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
1286
305
161
pF
pF
pF
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 10 V,
VGS = 4.5 V
ID = 5.5 A,
10 20
14 25
25 40
8 16
12 17
2.6
3
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 1.0 A (Note 2)
1.0
0.7 1.2
A
V
Notes:
1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCAis determined by the user's board design.
a) RθJAis 100°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJAis 125°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDW2503NZ Rev C(W)
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FDW2503NZ mosfet
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관련 데이터시트
FDW2503N
Dual N-Channel 2.5V Specified PowerTrench MOSFET - Fairchild Semiconductor
FDW2503NZ
Dual N-Channel 2.5V Specified PowerTrench MOSFET - Fairchild Semiconductor