AP2319GN-HF-3 반도체 회로 부품 판매점
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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 Advanced Power Electronics |
Advanced Power
Electronics Corp.
AP2319GN-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Lower On-resistance
Surface Mount Device
RoHS-compliant, halogen-free
D
BV DSS
-30V
G
R DS(ON)
90mΩ
S ID
-3.1A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP2319GN-HF-3 is in the popular SOT-23 small surface-mount package
which is widely used in commercial and industrial applications where a small
board footprint is required.
This device is well suited for use in medium current applications such as
load switches and DC-DC converters.
D
SOT-23 G
S
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TA =25°C
ID at TA= 70°C
IDM
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
+ 20
-3.1
-2.5
-12
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Value
90
Unit
°C/W
Ordering Information
AP2319GN-HF-3TR RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200910301-3 1/5
Advanced Power
Electronics Corp.
AP2319GN-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-2.6A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-5V, ID=-3A
Drain-Source Leakage Current
VDS=-20V, VGS=0V
Drain-Source Leakage Current (Tj=55oC) VDS=-16V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
VGS=±8V, VDS=0V
ID=-3A
VDS=-16V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
VGS=-4.5V
VDS=-10V
ID=-1A
RG=3.3Ω, VGS=-5V
RD=10Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=-20V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
Min. Typ. Max. Units
-20 - - V
- - 97 mΩ
- - 130 mΩ
-0.3 -
-1 V
- 14 - S
- - -1 uA
- - -1 uA
- - ±100 nA
- 12.5 21 nC
- 1.5 - nC
- 3.5 - nC
- 8 - ns
- 17 - ns
- 24 - ns
- 33 - ns
- 920 - pF
- 90 - pF
- 85 - pF
- 4.5 6.8 Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-1.2A, VGS=0V
IS=-3.3A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 25 - ns
- 12 - nC
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test - pulse width < 300µs , duty cycle < 2%
3. Surface mounted on 1in2 copper pad of FR4 board; 270°C/W when mounted on minimum copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/5
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제조업체: Advanced Power Electronics
( ape )
AP2319GN-HF-3 mosfet
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[ AP2319GN-HF-3.PDF ]
[ AP2319GN-HF-3 다른 제조사 검색 ]
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