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Toshiba Semiconductor |
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TK45P03M1
1. Applications
• DC-DC Converters
• Desktop Computers
2. Features
(1) High-speed switching
(2) Low gate charge: QSW = 8.0 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VGS = 10 V)
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
TK45P03M1
1: Gate
2: Drain (heatsink)
3: Source
DPAK
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 30 V
Drain-gate voltage
(RGS = 20 kΩ)
VDGR
30
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
45 A
Drain current (pulsed)
(Note 1)
IDP
90
Power dissipation
(Tc = 25)
PD 39 W
Single-pulse avalanche energy
(Note 2)
EAS
53 mJ
Avalanche current
IAR 45 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2011-07-22
Rev.2.0
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 24 V, Tch = 25 (initial), L = 0.02 mH, RG = 1.2 Ω, IAR = 45 A
TK45P03M1
Symbol
Rth(ch-c)
Rth(ch-a)
Max Unit
3.21 /W
125
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2011-07-22
Rev.2.0
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