SSRF02N65SL 반도체 회로 부품 판매점
N-Ch Enhancement Mode Power MOSFET
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 SeCoS Halbleitertechnologie |
Elektronische Bauelemente
SSRF02N65SL
2A , 650V , RDS(ON) 4.8Ω
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSRF02N65SL is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent RDS(on) and gate charge for most of the synchronous
buck converter applications .
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
1
Gate
2
Drain
3
Source
ITO-220
BN
MA
D
E
H JC
K
LL
G
F
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
14.60 16.50
9.50 10.50
12.60 14.00
4.30 5.10
2.30
3.2
2.30 3.10
0.30 0.75
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
2.70 4.00
0.90 1.50
0.50 0.95
2.34 2.74
2.40 3.60
φ 3.0 φ 3.4
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current
TC=25°C
TC=100°C
ID
2
1.3
Pulsed Drain Current
IDM 8
Total Power Dissipation
Single Pulse Avalanche Energy 1
TC=25°C
Derate above 25°C
PD
EAS
25
0.2
100
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient
RθJA
120
Maximum Thermal Resistance Junction-Case
Notes:
1. L=30mH,IAS=2.37A, VDD=60V, RG=25Ω, Starting TJ =25°C
RθJC
5
Unit
V
V
A
A
A
W
mJ
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
25-Sep-2013 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 5
Elektronische Bauelemente
SSRF02N65SL
2A , 650V , RDS(ON) 4.8Ω
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
650 -
-
V VGS=0, ID= 250µA
VGS(th)
2 - 4 V VDS=VGS, ID=250µA
Gate-Source Leakage Current
IGSS - - ±100 nA VGS= ±30V
Drain-Source Leakage Current
IDSS - - 1 µA VDS=650V, VGS=0
Static Drain-Source On-Resistance
Total Gate Charge 1.2
Gate-Source Charge 1.2
Gate-Drain Change 1.2
Turn-on Delay Time 1.2
Rise Time 1.2
Turn-off Delay Time 1.2
Fall Time 1.2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
4.3 4.8
Ω VGS=10V, ID=1A
- 5.83 -
- 1.73 -
-2-
ID=2A
nC VDS=520V
VGS=10V
- 10.67 -
- 20 -
- 12.4 -
VDD=325V
nS ID=2A
RG=25 Ω
- 18 -
- 261.8 -
- 34.3 -
- 1.3 -
VGS =0
pF VDS=25V
f =1.0MHz
Source-Drain Diode
Diode Forward Voltage
Continuous Source Current
Pulsed Source Current
VSD - - 1.4 V IS=2A, VGS=0
IS - - 2 A Integral Reverse P-N
Junction Diode in the
ISM - - 8 A MOSFET
Reverse Recovery Time
Trr
Reverse Recovery Charge
Qrr
Notes:
1. Pulse Test: Pulse width ≦300µS, Duty cycle≦2%
2. Essentially independent of operating temperature.
- 368.88 -
- 1.08 -
ns IS=2A,VGS=0,
µC dlF/dt=100A/µS
http://www.SeCoSGmbH.com/
25-Sep-2013 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 5
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SSRF02N65SL mosfet
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