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AiT Semiconductor |
AiT Semiconductor Inc.
www.ait-ic.com
AM5853
MOSFET+ SCHOTTKY DIODE
-20V P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM5853 is the P-Channel logic enhancement
mode power field effect transistors are produced
using high cell density. Advanced trench
technology.
This high density process is especially tailored to
minimize on-state resistance.
The AM9435 is particularly suited for low voltage
application, and low in-line power loss are needed
in a very small outline surface mount package.
MOSFET
-20V/-3.5A, RDS(ON) < 70mΩ@VGS = -4.5V
-20V/-2.4A, RDS(ON) < 95mΩ@VGS = -2.5V
-20V/-1.8A, RDS(ON) < 125mΩ@VGS = -1.8V
SCHOTTKY
VKA =20V, VF0.43(Typ.)@IF =1A
Super high density cell design for extremely low
RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
Available in DFN8 (3x2) Package
The AM5853 is available in DFN8 (3x2) Package
APPLICATION
ORDERING INFORMATION
Package Type
Part Number
DFN8
AM5853J8R
J8
AM5853J8VR
Note
R: Tape & Reel
V: Green Package
AiT provides all Pb free products
Suffix “ V “ means Green Package
Battery Powered System
Notebook Power Management
Cell Phone
P-CHANNEL MOSFET
REV1.0
- MAR 2010 RELEASED –
-1-
AiT Semiconductor Inc.
www.ait-ic.com
PIN DESCRIPTION
AM5853
MOSFET+ SCHOTTKY DIODE
-20V P-CHANNEL ENHANCEMENT MODE
Pin #
1
2
3
4
5
6
7
8
Symbol
A
A
S
G
D
D
K
K
Top View
Anode
Anode
Source
Gate
Drain
Drain
Cathode
Cathode
Function
REV1.0
- MAR 2010 RELEASED –
-2-
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