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SYNC POWER |
SPN8919
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8919 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN8910
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
High Frequency Small Power Switching for
MB/NB/VGA
Network DC/DC Power System
Load Switch
FEATURES
100V/2A, RDS(ON)= 180mΩ@VGS= 10V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current
capability
SOT-89 package design
PIN CONFIGURATION
SOT-89
GD S
123
PART MARKING
2012/07/26 V.1
Page 1
SPN8919
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
ORDERING INFORMATION
Part Number
Package
SPN8919S89RGB
SOT-89
※ SPN8910S89RGB : Tape Reel ; Pb – Free ; Halogen - Free
Part Marking
SPN8919
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Power Dissipation
TA=25℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
TSTG
RθJA
Typical
100
±20
2.8
2.2
10
1.5
150
-55/150
85
Unit
V
V
A
A
W
℃
℃
℃/W
2012/07/26 V.1
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