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SYNC POWER |
SPN8878B
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8878B is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. The
SPN8878B has been designed specifically to improve the
overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON)
and fast switching speed.
APPLICATIONS
z Power Management in Note book
z Powered System
z DC/DC Converter
z Load Switch
FEATURES
30V/20A,RDS(ON)= 14mΩ@VGS=10V
30V/15A,RDS(ON)= 19mΩ@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252 and TO-251 package design
PIN CONFIGURATION
TO-252
TO-251
PART MARKING
TO-252
TO-251
2011/09/27 Ver.5
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SPN8878B
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
Package
SPN8878BT252RGB
TO-252
SPN8878BT251TGB
TO-251
※ SPN8878BT252RGB : Tape Reel ; Pb – Free ; Halogen - Free
※ SPN8878BT251TGB : Tube ; Pb – Free ; Halogen - Free
Part Marking
SPN8878B
SPN8878B
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
VDSS
Gate –Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA=25℃
TA=100℃
VGSS
ID
IDM
Continuous Drain Current
Power Dissipation
TO-252-2L
TA=25℃
TO-251
Avalanche Energy with Single Pulse
( Tj=25℃, L = 0.14mH , IAS = 30A , VDD = 20V. )
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
IS
PD
EAS
TJ
TSTG
RθJA
Typical
30
±20
18
13
40
5
40
55
63
-55/150
-55/150
100
2011/09/27 Ver.5
Unit
V
V
A
A
A
W
mJ
℃
℃
℃/W
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