PMPB48EP 반도체 회로 부품 판매점
single P-channel Trench MOSFET
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 NXP Semiconductors |
PMPB48EP
30 V, single P-channel Trench MOSFET
10 September 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
• Trench MOSFET technology
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portable devices
• Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -10 V; Tamb = 25 °C; t ≤ 5 s
VGS = -10 V; ID = -4.7 A; Tj = 25 °C
Min Typ Max Unit
- - -30 V
-20 -
20 V
[1] - - -6.8 A
- 40 50 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMPB48EP
30 V, single P-channel Trench MOSFET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
7 D drain
8 S source
Simplified outline
16
7
25
Graphic symbol
D
G
384
Transparent top view
DFN2020MD-6 (SOT1220)
S
017aaa257
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
PMPB48EP
DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
Version
SOT1220
4. Marking
Table 4. Marking codes
Type number
PMPB48EP
Marking code
1U
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -10 V; Tamb = 25 °C; t ≤ 5 s
VGS = -10 V; Tamb = 25 °C
VGS = -10 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
PMPB48EP
All information provided in this document is subject to legal disclaimers.
Product data sheet
10 September 2012
[1]
[1]
[1]
[1]
Min Max Unit
- -30 V
-20 20
V
- -6.8 A
- -4.7 A
- -3 A
- -19 A
- 1.7 W
© NXP B.V. 2012. All rights reserved
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PMPB48EP mosfet
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