ANU4N60B 반도체 회로 부품 판매점
N-Chanel Power MOSFET
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 angstrem |
N-Chanel Power MOSFET
ANA4N60B, ANP4N60B, ANB4N60B,
AND4N60B, ANI4N60B, ANU4N60B
Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC
Applications
SMPS
PFC
Features
Low Qg
Low Rdson
RoHS compliant
1
Gate
2
Drain
3
Source
Table 1. Device summary
Part numbers
Marking
Package
ANA4N60B
A4N60B
TO-220FP
ANP4N60B
P4N60B
TO-220
ANB4N60B
B4N60B
D²PAK
AND4N60B
ANI4N60B
D4N60B
I4N60B
DPAK
I2PAK
ANU4N60B
U4N60B
Table 2. Absolute Maximum Ratings
Symbol
Parameter
TO-220FP
TO-220
IPAK
Value
D²PAK
I2PAK
ID
ID
IDM(1)
VGS
PD
Tstg
Drain current (continuous),
VGS= at TC = 25°C
Drain current (continuous),
VGS= at TC = 100°C
Drain current (pulsed) at
TC = 25°C
Gate-source voltage
Maximum Power
Dissipation at TC = 25°C
Maximum Power
Dissipation at TC = 100°C
Storage temperature
25
4
2,5
16
±20
70
―
-55 … +150
Tj
Operating junction
temperature
TL
Soldering Temperature, for
10 sec.
Mounting Torque, 6-32 or
M3 Screw
Table 3. Thermal resistance
Symbol
Parameter
1,13
TO-220FP
TO-220
-55 … +150
260
―
Value
D²PAK
I2PAK
Rthj-case
Rthj-amb
Thermal resistance
junction-case max
Thermal resistance
junction-ambient max
5
1,78
62,5
Packaging
Tube
Tube
Tape and reel
Tape and reel
Tube
Tube
DPAK
IPAK
Units
A
A
A
V
W
W
°C
N·m
DPAK
IPAK
100
Value
°C/W
°C/W
1
Free Datasheet http://www.Datasheet4U.com
N-Chanel Power MOSFET
Table 4. Electrical Characteristics of the MOSFET
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
IDSS
IGSS
VGS(th)
VGS(th)/ TJ
Off Characteristics
Drain-to-Source Breakdown Voltage
600
Temperature Coefficient of Breakdown
Voltage
―
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
On Characteristics
3,0
Threshold Voltage temp. coefficient
―
RDS(on)
Static Drain to Source On Resistance
10
±100
V
V/°C
µA
nA
ID = 1 mA, VGS = 0
VGS = ± 20V
4,5 V
mV/°C
VDS = VGS, ID =
50μA
2,2 Ω VGS = 10V, ID = 2 A
gfs
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
td(on)
tr
td(off)
tf
Forward Transconductance
Input Capacitance
3
Dynamic Characteristics
510
Output Capacitance
67
Reverse Transfer Capacitance
13
Total Gate Charge
12
Gate to Source Gate Charge
3,8
Gate to Drain “Miller” Charge
Turn-On Delay Time
9,8
Switching Characteristics
12
Rise Time
9,5
Turn-Off Delay Time
29
Fall Time
16,5
S VDS = 15 V, ID = 2 A
pF
pF
VDS = 25V, f = 1
MHz, VGS = 0
pF
nC
VDD = 480V, ID = 4
nC A,
nC VGS = 10V
ns
VDD = 300 V, ID = 2
ns A
ns RG = 4.7VGS = 10
V
ns
Ref.
Fig
Table 5. Avalanche Characteristic
Symbol
Parameter
EAS
EAR
VDS(Avalanche)
IAR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
Avalanche Current
Typ.
Max.
120
―
―
4
Units
mJ
mJ
V
A
Conditions
Ref.Fig
Table 6. Source drain diode
Symbol
Parameter
VSD Diode Forward Voltage
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min. Typ. Max. Units
1,6 V
4A
400
1700
16
A
ns
nC
Conditions
ISD = 4 A, VGS = 0
ISD = 4 A, di/dt = 100A/μs
VDD = 24V, Tj = 150°C
Ref.Fig
2
Free Datasheet http://www.Datasheet4U.com
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제조업체: angstrem
( angstrem )
ANU4N60B mosfet
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