FB190SA10 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 Vishay |
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VS-FB190SA10
Vishay Semiconductors
Power MOSFET, 190 A
SOT-227
PRODUCT SUMMARY
VDSS
ID DC
RDS(on)
Type
Package
100 V
190 A
0.0065
Modules - MOSFET
SOT-227
FEATURES
• Fully isolated package
• Very low on-resistance
• Fully avalanche rated
• Dynamic dV/dt rating
• Low drain to case capacitance
• Low internal inductance
• Optimized for SMPS applications
• Easy to use and parallel
• Industry standard outline
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
High current density power MOSFETs are paralleled into a
compact, high power module providing the best
combination of switching, ruggedized design, very low
on-resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial-industrial applications at power dissipation
levels to approximately higher than 500 W. The low thermal
resistance and easy connection to the SOT-227 package
contribute to its universal acceptance throughout the
industry.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous drain current at VGS 10 V
Pulsed drain current
Power dissipation
Linear derating factor
TC = 40 °C
ID
TC = 100 °C
IDM
PD TC = 25 °C
Gate to source voltage
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Peak diode recovery dV/dt
VGS
EAS (2)
IAR (1)
EAR (1)
dV/dt (3)
Operating junction and storage temperature range
Insulation withstand voltage (AC-RMS)
Mounting torque
TJ, TStg
VISO
M4 screw
Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature.
(2) Starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 180 A.
(3) ISD 180 A, dI/dt 83 A/μs, VDD V(BR)DSS, TJ 150 °C.
MAX.
190
130
720
568
2.7
± 20
700
180
48
5.7
- 55 to + 150
2.5
1.3
UNITS
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
kV
Nm
Revision: 13-Aug-13
1 Document Number: 93459
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.net/
www.vishay.com
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction and storage temperature range
Junction to case
Case to heatsink
Weight
TJ, TStg
RthJC
RthCS
Flat, greased surface
Mounting torque
Case style
VS-FB190SA10
Vishay Semiconductors
MIN.
- 55
-
-
-
-
TYP. MAX.
- 150
- 0.22
0.05 -
30 -
- 1.3
SOT-227
UNITS
°C
°C/W
g
Nm
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
Static drain to source on-resistance
RDS(on)
VGS = 10 V, ID = 180 A
Gate threshold voltage
Forward transconductance
VGS(th)
gfs
VDS = VGS, ID = 250 μA
VDS = 25 V, ID = 180 A
Drain to source leakage current
VDS = 100 V, VGS = 0 V
IDSS
VDS = 80 V, VGS = 0 V, TJ = 125 °C
Gate to source forward leakage
IGSS
VGS = 20 V
VGS = - 20 V
Total gate charge
Gate to source charge
Gate to drain ("Miller") charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal source inductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
ID = 180 A
VDS = 80 V
VGS = 10 V
VDD = 50 V
ID = 180 A
Rg = 2.0(internal)
RD = 0.27
Between lead, and center of die contact
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS = 0 V
VDS = 25 V
f = 1.0 MHz
MIN.
100
-
-
2.0
93
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
MAX. UNITS
-V
0.093
-
V/°C
0.0054 0.0065
3.3 4.35
--
- 50
- 500
- 200
- - 200
250 -
40 -
110 -
45 -
351 -
181 -
335 -
5.0 -
10 700 -
2800
-
1300
-
V
S
μA
nA
nC
ns
nH
pF
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
Continuous source current
(body diode)
Pulsed source current (body diode)
IS MOSFET symbol
D
-
- 190
showing the integral
G
ISM reverse p-n junction diode.
- - 740
S
Diode forward voltage
VSD TJ = 25 °C, IS = 180 A, VGS = 0 V
- 1.0 1.3
Reverse recovery time
trr
TJ = 25 °C, IF = 180 A, dI/dt = 100 A/μs
-
300
-
Reverse recovery charge
Qrr
- 2.6 -
Forward turn-on time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
UNITS
A
V
ns
μC
Revision: 13-Aug-13
2 Document Number: 93459
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.net/
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FB190SA10 mosfet
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