AON2809 반도체 회로 부품 판매점
12V Dual P-Channel MOSFET
|
|
 Alpha & Omega Semiconductors |
AON2809
12V Dual P-Channel MOSFET
General Description
Product Summary
The AON2809 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=-4.5V)
RDS(ON) (at VGS=-4.5V)
RDS(ON) (at VGS=-2.5V)
RDS(ON) (at VGS=-1.8V)
Typical ESD protection
-12V
-2A
< 68mΩ
< 90mΩ
< 118mΩ
HBM Class 2
Top View
DFN 2x2A
Bottom View
D1
G2
S2 D1
Pin 1
D2
S1
G1
D2
Pin 1
D1
G1 G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current G
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-12
±8
-2
-1.6
-8
2.1
1.3
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t ≤ 10s
Steady-State
Symbol
RθJA
Typ
50
80
Max
60
100
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
Rev 0: Nov. 2012
www.aosmd.com
Page 1 of 5
Free Datasheet http://www.datasheet4u.com/
AON2809
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-12
V
IDSS Zero Gate Voltage Drain Current
VDS=-12V, VGS=0V
TJ=55°C
-1
µA
-5
IGSS Gate-Body leakage current
VDS=0V, VGS= ±6V
±10 µA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=-250µA
-0.3 -0.6 -0.9 V
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-8
A
RDS(ON) Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2A
VGS=-2.5V, ID=-1A
TJ=125°C
55 68
mΩ
72 89
70 90 mΩ
VGS=-1.8V, ID=-1A
90 118 mΩ
gFS Forward Transconductance
VDS=-5V, ID=-2A
8S
VSD Diode Forward Voltage
IS=-1A,VGS=0V
-0.7 -1
V
IS Maximum Body-Diode Continuous Current
-1.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-6V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
415 pF
115 pF
78 pF
26 Ω
SWITCHING PARAMETERS
Qg(4.5) Total Gate Charge
4.4 nC
Qgs Gate Source Charge
VGS=-4.5V, VDS=-6V, ID=-2A
0.8 nC
Qgd Gate Drain Charge
0.9 nC
tD(on)
Turn-On DelayTime
11.8
ns
tr Turn-On Rise Time
VGS=-4.5V, VDS=-6V, RL=3Ω,
24.5 ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
54.5 ns
tf Turn-Off Fall Time
37.3
ns
trr Body Diode Reverse Recovery Time IF=-2A, dI/dt=100A/µs
21 ns
Qrr Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs
5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on RθJA t ≤ 10s and the maxminum maximum allowed junction temperature of 150°C.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Nov. 2012
www.aosmd.com
Page 2 of 5
Free Datasheet http://www.datasheet4u.com/
|
PDF 파일 내의 페이지 : 총 5 페이지
제조업체: Alpha & Omega Semiconductors
( aos )
AON2809 mosfet
데이터시트 다운로드 :
[ AON2809.PDF ]
[ AON2809 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
AON2800
20V Dual N-Channel MOSFET - Freescale
AON2800
20V Dual N-Channel MOSFET - Alpha & Omega Semiconductors
AON2801
Dual P-Channel Enhancement Mode Field Effect Transistor - Freescale
AON2801
Dual P-Channel Enhancement Mode Field Effect Transistor - Alpha & Omega Semiconductors
AON2802
30V Dual N-Channel MOSFET - Alpha & Omega Semiconductors
AON2803
20V Dual P-Channel MOSFET - Alpha & Omega Semiconductors
AON2809
12V Dual P-Channel MOSFET - Alpha & Omega Semiconductors