AON2401 반도체 회로 부품 판매점
8V N-Channel MOSFET
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 Freescale |
AON2401
8V N-Channel MOSFET
General Description
The AON2401 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R .DS(ON) This device is ideal for load switch and battery protection applications.
Features
VDS
ID (at VGS=-2.5V)
RDS(ON) (at VGS =-2.5V)
RDS(ON) (at VGS =-1.8V)
RDS(ON) (at VGS =-1.5V)
RDS(ON) (at VGS =-1.2V)
-8V
-8A
< 22mΩ
< 28mΩ
< 36mΩ
< 53mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current G
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-8
±5
-8
-6
-32
2.8
1.8
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t ≤ 10s
Steady-State
Symbol
RθJA
Typ
37
66
Max
45
80
Units
V
V
A
A
W
°C
Units
°C/W
°C/W
1/5
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
AON2401
8V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID=-250µA, VGS=0V
VDS=-8V, VGS=0V
VDS=0V, VGS=±5V
VDS=VGS, ID=-250µA
VGS=-2.5V, VDS=-5V
VGS=-2.5V, ID=-8A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance VGS=-1.8V, ID=-6A
VGS=-1.5V, ID=-4A
VGS=-1.2V, ID=-2A
Forward Transconductance
VDS=-5V, ID=-8A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
-8
-0.15
-32
-0.4
18
24.5
22.6
27.7
39
33
-0.55
-1
-5
±100
-0.65
22
32
28
36
53
-1
-4
V
µA
nA
V
A
mΩ
mΩ
mΩ
mΩ
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-4V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1465
345
235
10
pF
pF
pF
Ω
SWITCHING PARAMETERS
Qg Total Gate Charge
12.5 18 nC
Qgs Gate Source Charge
VGS=-4.5V, VDS=-4V, ID=-8A
1.5 nC
Qgd Gate Drain Charge
3 nC
tD(on)
Turn-On DelayTime
4 ns
tr Turn-On Rise Time
VGS=-4.5V, VDS=-4V, RL=0.5Ω,
28
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
99 ns
tf Turn-Off Fall Time
43 ns
trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=100A/µs
23 ns
Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs
7 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/5
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
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AON2401 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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