AON2290 반도체 회로 부품 판매점
100V N-Channel MOSFET
|
|
 Alpha & Omega Semiconductors |
AON2290
100V N-Channel MOSFET
General Description
Product Summary
The AON2290 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS =10V)
RDS(ON) (at VGS =4.5V)
100V
4.5A
< 72mΩ
< 97mΩ
Top View
DFN 2x2B
Bottom View
D
D
S
D
S
Pin 1
G
D
D
Pin 1
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=100°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±20
4.5
3.5
25
2.8
1.8
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t ≤ 10s
Steady-State
Symbol
RθJA
Typ
37
66
Max
45
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
Rev 0 : Oct. 2012
www.aosmd.com
Page 1 of 5
Free Datasheet http://www.datasheet4u.com/
AON2290
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=100V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=4.5A
VGS=4.5V, ID=4A
Forward Transconductance
VDS=5V, ID=4.5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=50V, ID=4.5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=11Ω,
RGEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=4.5A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/µs
Min
100
1.7
25
Typ
2.3
59
110
77
13
0.78
415
32
3
1.4
6.5
3
1.5
1.5
4
2
15
2
16
44
Max Units
1
5
±100
2.8
72
134
97
1
3.5
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
12 nC
6 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any
given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Oct. 2012
www.aosmd.com
Page 2 of 5
Free Datasheet http://www.datasheet4u.com/
|
PDF 파일 내의 페이지 : 총 5 페이지
제조업체: Alpha & Omega Semiconductors
( aos )
AON2290 mosfet
데이터시트 다운로드 :
[ AON2290.PDF ]
[ AON2290 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
