AON2260 반도체 회로 부품 판매점
60V N-Channel MOSFET
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 Freescale |
AON2260
60V N-Channel MOSFET
General Description
The AON2260 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON) .This device is ideal for boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS = 10V)
RDS(ON) (at VGS = 4.5V)
60V
6A
< 44mΩ
< 53mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
60
±20
6
4.7
30
2.8
1.8
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t ≤ 10s
Steady-State
Symbol
RθJA
Typ
37
66
Max
45
80
Units
V
V
A
A
W
°C
Units
°C/W
°C/W
1/5
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
AON2260
60V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
V
IDSS Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
TJ=55°C
1
µA
5
The AON22G6a0tec-oBmodbyinleesakaadgveanccuerdretnret nch MOSFETVtDeSc=h0nVo,loVgGyS=w±it2h0aV low resistance package to provid±e10e0xtremneAly low R
VGS(th) Gate Threshold Voltage
VDS=VGS，ID=250µA
1.5 2 2.5 V
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=6A
TJ=125°C
36 44
mΩ
61.5 75
VGS=4.5V, ID=4A
42 53 mΩ
gFS Forward Transconductance
VDS=5V, ID=6A
21 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.75 1
V
IS Maximum Body-Diode Continuous Current
3.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
426 pF
50 pF
5 pF
1 2.3 3.5 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
6.1 12 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=6A
2.6 6 nC
1.2 nC
Qgd Gate Drain Charge
0.8 nC
tD(on)
Turn-On DelayTime
3 ns
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=5Ω,
2.5 ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
15 ns
tf Turn-Off Fall Time
1.5 ns
trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs
27 ns
Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
12 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/5
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
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AON2260 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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