BSZ440N10NS3G 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 Infineon |
OptiMOS™3 Power-Transistor
Features
• Very low gate charge for high frequency applications
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
BSZ440N10NS3 G
Product Summary
V DS
R DS(on),max
ID
100 V
44 mΩ
18 A
PG-TSDSON-8
Type
BSZ440N10NS3 G
Package
PG-TDSON-8
Marking
440N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=50 K/W2)
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=12 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
18
11
5.3
72
17
±20
29
-55 ... 150
55/150/56
Unit
A
mJ
V
W
°C
Rev. 2.0
page 1
2010-04-26
Free Datasheet http://www.datasheet4u.com/
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
BSZ440N10NS3 G
min.
Values
typ.
Unit
max.
- - 4.3 K/W
- - 50
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=12 µA
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
V DS=100 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
V GS=20 V, V DS=0 V
V GS=10 V, I D=12 A
V GS=6 V, I D=6 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=12 A
100
2
-
-
-
-
-
-
8
-
2.7
0.01
10
1
38
48
1.5
15
-V
3.5
1 µA
100
100 nA
44 mΩ
86
-Ω
-S
1)J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) see figure 3
Rev. 2.0
page 2
2010-04-26
Free Datasheet http://www.datasheet4u.com/
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PDF 파일 내의 페이지 : 총 9 페이지
제조업체: Infineon
( infineon )
BSZ440N10NS3G mosfet
데이터시트 다운로드 :
[ BSZ440N10NS3G.PDF ]
[ BSZ440N10NS3G 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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