NVMFD5852NLWF 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 ON Semiconductor |
NVMFD5852NL,
NVMFD5852NLWF
Power MOSFET
40 V, 6.9 mW, 44 A, Dual N−Channel Logic
Level, Dual SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Designs
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• NVMFD5852NLWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
r2e,n3t,R4Y) J−mb (Notes 1,
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Steady
State
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Tmb = 100°C
Continuous Drain Cur-
rent
& 4)
RqJA
(Notes
1,
3
Power Dissipation
RqJA (Notes 1 & 3)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
40
"20
44
31
27
13
15
10.6
3.2
1.6
329
−55 to
175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 40 A
Single Pulse Drain−to−Source Avalanche
EAS 80 mJ
Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 40 A,
L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
RYJ−mb
5.6
°C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second are higher but are dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
40 V
RDS(on) MAX
6.9 mW @ 10 V
12.0 mW @ 4.5 V
ID MAX
44 A
Dual N−Channel
D1
D2
G1 G2
S1 S2
MARKING DIAGRAM
1
DFN8 5x6
(SO8FL)
CASE 506BT
D1 D1
S1
G1 5852xx
S2 AYWZZ
G2
D2 D2
D1
D1
D2
D2
5852NL = Specific Device Code
for NVMFD5852NL
5852LW = Specific Device Code
for NVMFD5852NLWF
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
Package Shipping†
NVMFD5852NLT1G
DFN8 1500 / Tape &
(Pb−Free)
Reel
NVMFD5852NLWFT1G DFN8 1500 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
April, 2013 − Rev. 5
1
Publication Order Number:
NVMFD5852NL/D
Free Datasheet http://www.datasheet4u.com/
NVMFD5852NL, NVMFD5852NLWF
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VVDGSS
=
=
0 V,
40 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VDS = 5 V, ID = 5 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Charge
Crss
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS
=
4.5
ID
V,
=
2V0DAS
=
32
V,
VGS = 10 V, VDS = 32V, ID = 20 A
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 32 V,
ID = 20 A, RG = 2.5 W
VGS = 10 V, VDS = 32 V,
ID = 20 A, RG = 2.5 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 20 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 20 A
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min
40
1.4
Typ
37.3
6.3
5.3
8.7
24
1800
240
180
20
1.5
5.5
10.9
36
12
52
21
13
12
8.0
27
5.0
0.84
0.69
22.3
12.8
9.4
15.2
Max Unit
1.0
100
±100
V
mV/°C
mA
nA
2.4 V
mV/°C
6.9 mW
12
S
pF
nC
nC
ns
ns
1.1 V
ns
nC
http://onsemi.com
2
Free Datasheet http://www.datasheet4u.com/
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제조업체: ON Semiconductor
( onsemi )
NVMFD5852NLWF mosfet
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