UT45N03 반도체 회로 부품 판매점
N-CHANNEL POWER MOSFET
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 Unisonic Technologies |
UNISONIC TECHNOLOGIES CO., LTD
UT45N03
40A, 25V N-CHANNEL
POWER MOSFET
FEATURES
* RDS(ON) = 21mΩ @VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT45N03L-TM3-R
UT45N03G-TM3-R
UT45N03L-TN3-T
UT45N03G-TN3-T
UT45N03L-TN3-R
UT45N03G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-251
TO-252
TO-252
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-165.C
Free Datasheet http://www.datasheet4u.com/
UT45N03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
25
V
Gate-Source Voltage
VGSS
±15
V
Continuous Drain Current
ID
40
A
Pulsed Drain Current (Note 1)
IDM
160
A
Power Dissipation
PD 65 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
50
1.92
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Drain-Source Breakdown Voltage
BVDSS
IDSS
IGSS
VGS=0V, ID=250μA
VDS=25V, VGS =0V
VDS =0V, VGS = ±5V
25
0.05 10
10 100
V
µA
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS =VGS, ID = 1mA
VGS=5V, ID=25A
VGS=10V, ID=25A
VGS=3.5V, ID=5.2A
1 1.5 2
17.5 24
13 21
22 40
V
mΩ
DYNAMICCHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =25 V, VGS =0V, f=1MHz
700
290
200
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VGS = 10 V, VDD =15 V,
ID = 15 A, RG = 6Ω
VDD =24V,VGS =5V, ID =40 A
10 20
60 90
35 60
ns
40 60
19
5 nC
8 11
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD IS=25A,VGS=0V
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
0.95 1.2
40
160
V
A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-165.C
Free Datasheet http://www.datasheet4u.com/
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( utc )
UT45N03 mosfet
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