IRF7799L2TRPBF 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 International Rectifier |
l RoHS Compliant, Halogen Free
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
l Industrial Qualified
PD - 96266
IRF7799L2TRPbF
IRF7799L2TR1PbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
250V min ± 30V max
Qg tot
Qgd
110nC
39nC
RDS(on)
32mΩ@ 10V
Vgs(th)
4.0V
S
S
D GS
S
S
S
SD
S
Applicable DirectFET Outline and Substrate Outline
SB SC
M2
M4
L8 DirectFET ISOMETRIC
L4 L6 L8
Description
The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7799L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system
reliability improvements, and makes this device ideal for high performance power converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
250
±30
35
25
6.6
375
140
325
21
Units
V
A
mJ
A
200
180 ID = 21A
160
140
120
60
55 Vgs = 7.0V
Vgs = 8.0V
50
Vgs = 10V
Vgs = 15V
45
TJ = 25°C
100 40
80
TJ = 125°C
60
40
20
4
TJ = 25°C
8 12 16 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
35
30
25
0
20 40 60 80 100
ID, Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.42mH, RG = 25Ω, IAS = 21A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
1
Free Datasheet h0tt8p://3/w1w/0w9.datasheet4u.com/
IRF7799L2TR/TR1PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
Drain-to-Source Breakdown Voltage
250
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient –––
RDS(on)
Static Drain-to-Source On-Resistance –––
VGS(th)
Gate Threshold Voltage
3.0
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
IDSS
Drain-to-Source Leakage Current
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd
Qgodr
Gate-to-Drain Charge
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG
td(on)
Gate Resistance
Turn-On Delay Time
tr
td(off)
Rise Time
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Diode Characteristics
54
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
0.12
32
4.0
-13
–––
–––
–––
–––
–––
110
26
5.7
39
39
45
33
0.73
36.3
33.5
73.9
26.6
6714
606
157
5063
217
Typ.
–––
–––
–––
132
1412
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
i––– V/°C Reference to 25°C, ID = 2mA
38 mΩ VGS = 10V, ID = 21A
5.0 V VDS = VGS, ID = 250µA
––– mV/°C
20
1
100
-100
–––
µA
1mA
nA
S
VDS = 250V, VGS = 0V
VDS = 250V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VDS = 50V, ID = 21A
165
––– VDS = 125V
–––
nC
VGS = 10V
ID = 21A
––– See Fig. 9
–––
––– nC VDS = 16V, VGS = 0V
Ãi––– Ω
––– VDD = 125V, VGS = 10V
–––
–––
ns
ID = 21A
RG=6.2Ω
–––
––– VGS = 0V
––– VDS = 25V
––– pF ƒ = 1.0MHz
––– VGS = 0V, VDS = 1.0V, f=1.0MHz
––– VGS = 0V, VDS = 80V, f=1.0MHz
Max. Units
Conditions
35
140
1.3
198
2118
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
iV TJ = 25°C, IS = 21A, VGS = 0V
ins TJ = 25°C, IF = 21A, VDD = 50V
nC di/dt = 100A/µs
2 www.irf.com
Free Datasheet http://www.datasheet4u.com/
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제조업체: International Rectifier
( ir )
IRF7799L2TRPBF mosfet
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