AON6906A 반도체 회로 부품 판매점
N-Channel MOSFET
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 Alpha & Omega Semiconductors |
AON6906A
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6906A is designed to provide a high efficiency
synchronous buck power stage with optimal layout and board
space utilization.It includes two specialized MOSFETs in a dual
Power DFN5x6A package. The Q1 "High Side" MOSFET is
desgined to minimze switching losses. The Q2 "Low Side"
MOSFET is desgined for low RDS(ON) to reduce conduction
losses.Power losses are minimized due to an extremely low
combination of RDS(ON) and Crss.In addition,switching behavior
is well controlled with a "Schottky style" soft recovery body
diode.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
37A
<14.4mΩ
<21.3mΩ
Q2
30V
48A
<11.7mΩ
<17.5mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
Current
TC=25°C
TC=100°C
ID
37 48
23 30
Pulsed Drain Current C
IDM 85 100
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
9.1
7.2
21
22
10
8.1
23
26
TC=25°C
Power Dissipation B TC=100°C
PD
31
12.5
45
18
TA=25°C
Power Dissipation A TA=70°C
PDSM
1.9
1.2
2
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
29
56
3.3
Typ Q2
27
51
2.3
Max Q1
35
67
4
Max Q2
32
61
2.8
Units
°C/W
°C/W
°C/W
Rev 0. Oct 2010
www.aosmd.com
Page 1 of 10
Free Datasheet http://www.datasheet4u.com/
AON6906A
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=9.1A
VGS=4.5V, ID=9.1A
Forward Transconductance
VDS=5V, ID=9.1A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1.3
85
1
5
100
1.8 2.4
12
17.5
17
30
0.73
14.4
21
21.3
1
33
V
µA
nA
V
A
mΩ
mΩ
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
400 510 670
150 220 310
13 22 38
0.9 1.8 2.7
pF
pF
pF
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.9 7.4 9 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=9.1A
2.6 3.3 4.0 nC
1.2 1.5 1.8 nC
Qgd Gate Drain Charge
0.8 1.4 2 nC
tD(on)
Turn-On DelayTime
4.3 ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
8
15.8
ns
ns
tf Turn-Off Fall Time
3.4 ns
trr Body Diode Reverse Recovery Time IF=9.1A, dI/dt=500A/µs
7.2 9 11 ns
Qrr Body Diode Reverse Recovery Charge IF=9.1A, dI/dt=500A/µs
11.8 14.7 17.7 nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design.
B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Oct 2010
www.aosmd.com
Page 2 of 10
Free Datasheet http://www.datasheet4u.com/
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AON6906A mosfet
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