SIA436DJ 반도체 회로 부품 판매점
N-Channel MOSFET
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 Vishay |
New Product
N-Channel 8 V (D-S) MOSFET
SiA436DJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) Max.
0.0094 at VGS = 4.5 V
0.0105 at VGS = 2.5 V
8 0.0125 at VGS = 1.8 V
0.0180 at VGS = 1.5 V
0.0360 at VGS = 1.2 V
ID (A)a
12
12
12
12
12
Qg (Typ.)
15 nC
PowerPAK SC-70-6L-Single
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Applications such as Smart
Phones, Tablet PCs and Mobile Computing
- Low Voltage Gate Drive
- Low Voltage Drop
- Power Switch for ICs
D
D
6
D
5
2.05 mm S
4
1
D
2
D
3
G
S
2.05 mm
Marking Code
Part # code
AOX
XXX
Lot Traceability
and Date code
Ordering Information: SiA436DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
8
±5
12a
12a
12a, b, c
12a, b, c
50
12a
2.9b, c
19
12
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
28
5.3
36
°C/W
6.5
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 63535
www.vishay.com
S11-2242-Rev. A, 14-Nov-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/
SiA436DJ
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
Zero Gate Voltage Drain Current
IDSS
VDS = 8 V, VGS = 0 V
VDS = 8 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 15.7 A
VGS = 2.5 V, ID = 14.9 A
Drain-Source On-State Resistancea
RDS(on)
VGS = 1.8 V, ID = 13.6 A
VGS = 1.5 V, ID = 2.5 A
VGS = 1.2 V, ID = 1.5 A
Forward Transconductancea
gfs VDS = 4 V, ID = 15.7 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 4 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 4 V, VGS = 5 V, ID = 15.7 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
IS
ISM
VSD
trr
Qrr
ta
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 4 V, VGS = 4.5 V, ID = 15.7 A
f = 1 MHz
VDD = 4 V, RL = 0.4 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 4 V, RL = 0.4 Ω
ID ≅ 10 A, VGEN = 5 V, Rg = 1 Ω
TC = 25 °C
IS = 10 A, VGS = 0 V
IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C
Min. Typ. Max. Unit
8V
11
- 2.5
mV/°C
0.35 0.8 V
± 100
nA
1
µA
10
20 A
0.0078 0.0094
0.0087 0.0105
0.0104 0.0125
Ω
0.0120 0.0180
0.0180 0.0360
70 S
1508
535
321
16.8 25.2
15 23
1.7
0.9
0.5 2.5
5
11 20
10 20
30 45
8 16
10 20
10 20
30 45
8 16
12
50
0.73 1.2
10 20
14
4
6
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 63535
2 S11-2242-Rev. A, 14-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/
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SIA436DJ mosfet
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