APM2701CG 반도체 회로 부품 판매점
Dual Enhancement Mode MOSFET
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 TY Semiconductor |
SMD Type
MOSFET
Product specification
APM2701CG
Features
N-Channel VDS=20V ID=3A
RDS(ON) 70m (VGS = 4.5V)
RDS(ON) 110m (VGS = 2.5V)
P-C hannel VDS=-20V ID=-1.5A
RDS(ON) 190m (VGS =-4.5V)
RDS(ON) 235m (VGS =-2.5V)
( SOT-23-6 )
D1 S1 D2
G1 S2 G2
D1 S2
G1
S1
n-channel
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
TA=25
TA =10 0
Diode Continuous Forward Current
Thermal Resistance.Junction- to-Ambient
Junction and Storage Temperature Range
G2
D2
p-channel
Sy mb ol
VD S
VG S
ID
I DM
PD
IS
RthJA
TJ , TSTG
N-Channel P-Channel
20 -20
10 10
3 -1.5
10 -6
0. 83
0 .3
1 -1
150
-55 to 150
U nit
V
A
W
A
/W
Unit: mm
http://www.twtysemi.com
4008-318-123
1 of 2
Free Datasheet http://www.datasheet4u.com/
SMD Type
MOSFET
Product specification
APM2701CG
Electrical Characteristics Ta = 25
P arame ter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Diode Forward Voltage
S ym bol
Testcon dit ons
Type Min Typ
VDS S
ID=250 A, VGS=0V
ID=-250 A, VGS=0V
N-CH 20
P-CH -20
IDS S
VDS=16V, VGS=0V
VDS=-16V, VGS=0V
N-CH
P-CH
I GSS
VDS=0V, VGS= 10V
VDS=0V, VGS= 10V
N-CH
P-CH
VDS=VGS ID=250 A
VG S (t h)
VDS=VGS ID=-250 A
N-CH 0.45 0.6
P-CH -0.45 -0.6
VGS=4.5V, ID =3A
VGS=2.5V, ID =1.7A
RDS ( On)
VGS=-4.5V, ID=-1.5A
VGS=-2.5V, ID=-1A
N-CH
P-CH
50
90
145
180
Ciss
N-Cha nnel :
N-CH
P-CH
270
300
Coss
VGS=0V, VDS=10V, f=1MH z
P -C hann el:
N-CH
P-CH
70
50
VGS=0V, VDS=-10V, f=1MHz
Crs s
N-CH
P-CH
50
30
Qg
N-Cha nnel :
N-CH
P-CH
5
4
VGS=4.5V, VDS=10V, ID=3A
Qgs
P -C hann el:
N-CH
P-CH
0.5
0.6
VGS=-4.5V, VDS=-10V, ID=-1.5A
Qgd
N-CH
P-CH
1.6
1
t d(on)
N-Cha nnel :
N-CH
P-CH
6
6
VGS=4.5V, VDS=10V, ID=1A, RGEN=6Ω N-CH
tr RL=10 Ω
P-CH
5
8
t d(off)
tf
P -C hann el:
N-CH
VGS=-4.5V, VDS=-10V, ID=-1A, RGEN=6Ω P-CH
RL=10 Ω
N-CH
P-CH
12
10
6
5
IS = 0.5A ,V GS =0 V
VSD
IS = -0 .5A ,VG S =0V
N-CH
P-CH
0.7
-0.7
Max Unit
V
1
A
-1
10 0
nA
10 0
1
V
-1
70
110
m
190
2.3 5
pF
6.5
6
nC
12
10
10
12
ns
23
15
12
10
1.3
V
-1.3
■ Marking
Marking
52907
http://www.twtysemi.com
4008-318-123
2 of 2
Free Datasheet http://www.datasheet4u.com/
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제조업체: TY Semiconductor
( ty )
APM2701CG mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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전력반도체 문의 : 010-3582-2743
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