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Diodes |
DMP1022UFDE
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-12V
RDS(ON) max
16mΩ @ VGS = -4.5V
21.5mΩ @ VGS = -2.5V
26mΩ @ VGS = -1.8V
32mΩ @ VGS = -1.5V
ID max
TA = 25°C
-9.1A
-7.9A
-7.0A
-6.3A
Description
This MOSFET has been designed specifically for use in battery
management applications.
Pin1
U-DFN2020-6
Type E
ESD PROTECTED
Bottom View
Features
• 0.6mm profile – ideal for low profile applications
• PCB footprint of 4mm2
• Low Gate Threshold Voltage
• Fast Switching Speed
• ESD Protected to 3KV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: U-DFN2020-6 Type E
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.0065 grams (approximate)
Drain
6D D1
5D D2
4S S G3
Pin Out
Bottom View
Gate
Gate
Protection
Diode
Source
Internal Schematic
Ordering Information (Note 4)
Part Number
DMP1022UFDE-7
Marking
P4
Reel size (inches)
7
Quantity per reel
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
DMP1022UFDE
Datasheet number: DS35477 Rev. 9 - 2
P4 = Product Type Marking Code
P4
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 7
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
July 2012
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/
DMP1022UFDE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
t<5s
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Continuous Source-Drain Diode Current
Pulsed Source-Drain Diode Current (10μs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TC = +25°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
ISM
Value
-12
±8
-9.1
-7.2
-11.2
-9.0
-90
-2.5
-7.1
-50
Units
V
V
A
A
A
A
A
Thermal Characteristics
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t<5s
TA = +25°C
TA = +70°C
Steady state
t<5s
Steady state
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.66
0.42
189
123
2.03
1.3
61
40
9.3
-55 to +150
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
Units
W
°C/W
W
°C/W
°C
100
10
1
0.1
RDS(on)
Limited
DC
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
PW = 100µs
PW = 10µs
0.01
0.01
0.1 1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
100
100
90
80
70
Single Pulse
RθJA = 61°C/W
RθJA(t) = r(t) * RθJA
TJ - TA = P * RθJA(t)
60
50
40
30
20
10
0
0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
DMP1022UFDE
Datasheet number: DS35477 Rev. 9 - 2
2 of 7
www.diodes.com
July 2012
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/
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