DMN2041L 반도체 회로 부품 판매점
N-CHANNEL ENHANCEMENT MODE MOSFET
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 Diodes |
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
DMN2041L
N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminals Connections: See Diagram Below
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
Drain
TOP VIEW
Gate
Source
Internal Schematic
D
GS
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Value
20
±12
6.4
4.5
30
Units
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
0.78
161
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
Unit
W
°C/W
°C
DMN2041L
Document number: DS31962 Rev. 1 - 2
1 of 6
www.diodes.com
September 2009
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/
DMN2041L
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Min
20
-
-
0.5
Static Drain-Source On-Resistance
RDS (ON)
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
-
-
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-
-
-
-
-
-
-
-
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-
Typ
-
-
-
-
20
26
6
0.7
550
88
81
1.34
15.6
7.2
1.0
1.9
4.69
13.19
22.10
6.43
Max
-
1.0
±100
1.2
28
41
-
1.2
-
-
-
-
-
-
-
-
-
-
-
-
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 20V, VGS = 0V
nA VGS = ±12V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 4.5V, ID = 6.0A
VGS = 2.5V, ID = 5.2A
S VDS = 10V, ID = 6A
V VGS = 0V, IS = 1.7A
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC VGS = 10V, VDS = 10V, ID = 6A
nC VGS = 4.5V, VDS = 10V, ID = 6A
ns
VDD = 10V, VGEN = 4.5V,
RGEN = 1Ω, ID = 6.7A
20 VGS = 10V
16 VGS = 4.5V
VGS = 3.0V
VGS = 2.5V
12
VGS = 2.0V
8
4 VGS = 1.5V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
20
VDS = 5V
16
12
8
TA = 150°C
4
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0 0.5 1 1.5 2 2.5 3
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMN2041L
Document number: DS31962 Rev. 1 - 2
2 of 6
www.diodes.com
September 2009
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/
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DMN2041L mosfet
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