DMG3407SSN 반도체 회로 부품 판매점
P-CHANNEL ENHANCEMENT MODE MOSFET
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 TY Semiconductor |
Product specification
DMG3407SSN
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-30V
RDS(ON)
50mΩ @ VGS = -10V
72mΩ @ VGS = -4.5V
ID
TA = 25°C
-4.0A
-3.3A
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead-Free Finish; RoHS compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Load Switch
• DC-DC Converters
• Power management functions
Mechanical Data
• Case: SC59
• Case Material – Molded Plastic. UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
• Terminal Connections: See Diagram
• Weight: 0.014 grams (approximate)
Drain
SC59
Gate
D
Top View
Source
Internal Schematic
GS
Pin Configuration
Ordering Information (Note 3)
Notes:
Part Number
DMG3407SSN-7
Case
SC59
Packaging
3000 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
Marking Information
G32
G32 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan Feb
12
2011
Y
Mar
3
2012
Z
Apr May
45
2013
A
Jun Jul
67
2014
B
Aug
8
Sep
9
2015
C
Oct
O
2016
D
Nov Dec
ND
http://www.twtysemi.com
Free Datasheet http://www.da1taoshfe2et4u.com/
Product specification
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -10V
Steady
State
t<10s
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
t<10s
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 5)
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
IS
DMG3407SSN
Value
-30
±20
-4.0
-3.2
-4.6
-3.6
-3.3
-2.6
-3.9
-3.1
-30
-2.0
Units
V
V
A
A
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 4)
Characteristic
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TA = 25°C
TA = 70°C
Steady state
t<10s
TA = 25°C
TA = 70°C
Steady state
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.1
0.7
166
118
1.8
1.1
98
71
18
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics @ TA = 25°C unless otherwise stated
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
-30
-
-
-1.0
-
-
-
-
466
80
47
2
10.6
5.2
1.3
1.1
-
-
-
-
6.8
5.5
Typ
-
-
-
-1.5
39
56
8.2
-0.75
582
114
76
5
13.3
6.5
1.7
1.9
6.0
12.9
35.4
30.7
8.5
7.0
Max
-
-1
±100
-2.1
50
72
-
-1.1
700
148
105
8
16
8.5
2
2.7
-
-
-
-
10.2
8.5
Unit Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250μA
mΩ VGS = -10V, ID = -4.1A
VGS = -4.5V, ID = -3.0A
S VDS = -5V, ID = -4A
V VGS = 0V, IS = -1A
pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
VGS = -10V, VDS = -15V, ID = -4A
nC
VGS = -4.5V, VDS = -15V,ID = -4A
ns
VGS = -10V, VDS = -15V,
RL = 3.6Ω, RG = 3Ω
ns
nC
IF = 4A, di/dt = 100A/μs
Notes:
2. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t<10s RθJA
3. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation PD is based on t<10s RθJA
4. Short duration pulse test used to minimize self-heating effect.
5. Guaranteed by design. Not subject to production testing.
http://www.twtysemi.com
Free Datasheet http://www.da2taoshfe2et4u.com/
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