AUIRFSL3206 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 International Rectifier |
AUTOMOTIVE GRADE
PD - 96401A
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Enhanced dV/dT and dI/dT capability
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
G
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other
applications.
AUIRFS3206
AUIRFSL3206
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
60V
2.4m:
3.0m:
c210A
S ID (Package Limited) 120A
D
D
G
Gate
DS
G
D2Pak
AUIRFS3206
D
Drain
DS
G
TO-262
AUIRFSL3206
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS (Thermally limited)
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
dRepetitive Avalanche Energy
fPeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
210
150
120
840
300
2.0
± 20
170
See Fig. 14, 15, 22a, 22b,
5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
kRθJC Junction-to-Case
jRθJA Junction-to-Ambient (PCB Mount) , D2Pak
Typ.
–––
–––
Max.
0.50
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www.da0t9a/s0h6e/e1t14u.com/
AUIRFS/SL3206
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
60 ––– ––– V VGS = 0V, ID = 250μA
d––– 0.07 ––– V/°C Reference to 25°C, ID = 5mA
g––– 2.4 3.0 mΩ VGS = 10V, ID = 75A
2.0 ––– 4.0 V VDS = VGS, ID = 150μA
gfs Forward Transconductance
RG Internal Gate Resistance
210 ––– –––
––– 0.7 –––
S VDS = 50V, ID = 75A
Ω
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– 20
––– 250
μA
VDS =60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
hEffective Output Capacitance (Time Related)
––– 120 170
––– 29 –––
––– 35
––– 85 –––
––– 19 –––
––– 82 –––
––– 55 –––
––– 83 –––
––– 6540 –––
––– 720 –––
––– 360 –––
––– 1040 –––
––– 1230 –––
ID = 75A
gnC
VDS =30V
VGS = 10V
ID = 75A, VDS =0V, VGS = 10V
VDD = 30V
gns
ID = 75A
RG =2.7Ω
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz, See Fig.5
iVGS = 0V, VDS = 0V to 48V , See Fig.11
hÃVGS = 0V, VDS = 0V to 48V
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 210
––– ––– 840
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
––– ––– 1.3
gV TJ = 25°C, IS = 75A, VGS = 0V
––– 33
––– 37
50
56
ns
TJ = 25°C
TJ = 125°C
––– 41
––– 53
62
80
nC
TJ = 25°C
TJ = 125°C
VR = 51V,
gIF = 75A
di/dt = 100A/μs
––– 2.1 ––– A TJ = 25°C
D
S
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction ISD ≤ 75A, di/dt ≤ 360A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
temperature. Bond wire current limit is 120A. Note that current
Pulse width ≤ 400μs; duty cycle ≤ 2%.
limitations arising from heating of the device leads may occur with Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.
as Coss while VDS is rising from 0 to 80% VDSS.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.023mH
RG = 25Ω, IAS = 120A, VGS =10V. Part not recommended for use
above this value.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C
2 www.irf.com
Free Datasheet http://www.datasheet4u.com/
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제조업체: International Rectifier
( ir )
AUIRFSL3206 mosfet
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국내 전력반도체 판매점
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