UTT50P10 반도체 회로 부품 판매점
P-CHANNEL POWER MOSFET
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 Unisonic Technologies |
UNISONIC TECHNOLOGIES CO., LTD
UTT50P10
Preliminary
-50A, -100V P-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC UTT50P10 is a P-channel power MOSFET using
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance. It can also
withstand high energy in the avalanche.
FEATURES
* VDS=-100V
* ID =-50A
* RDS(ON)=0.023Ω @ VGS=-10V, ID=-20A
* High Switching Speed
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UTT50P10L-TA3-T
UTT50P10G-TA3-T
TO-220
Note: Pin Assignment: G: Gate D: Drain S: Source
www.DataSheet.net/
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 2
QW-R502-607.a
Datasheet pdf - http://www.DataSheet4U.co.kr/
UTT50P10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-Source Voltage
Drain Current
Continuous
Pulsed
VGSS
ID
IDM
±20 V
-50 A
-90 A
Power Dissipation
Junction Temperature
PD 225 W
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Case
SYMBOL
θJC
ELECTRICAL CHARACTERISTICS
RATINGS
0.55
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage
Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=-250µA, VGS=0V
-100
VDS=0.8×Max.rating, VGS=0V, TJ=25°C
VDS=0.8×Max.rating, VGS=0V, TJ=125°C
VGS=+20V
VGS=-20V
-1
-500
+100
-100
V
µA
nA
nA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=-250µA
VGS=-10V, ID=-20A
VGS=-4.5V, ID=-15A
V =-15V, I =-20ADS
www.DataSheet.net/
D
-1 -3 V
0.019 0.023
0.021 0.025
Ω
80 S(1/Ω)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=-50V, f=1.0MHz
11100
700
1700
pF
pF
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
tD(ON)
tR
tD(OFF)
tF
VDD=-50V, VGS=-10V, ID=-50A, RG=1Ω
20 30
510 855
145 220
870 1300
ns
ns
ns
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IF=-20A, VGS=0V, Pulse test, t≤300μs,
duty cycle d≤2%
-1.0 -1.5 V
Body Diode Reverse Recovery Time
tRR
TJ=25°C, IF=-20A, VR=-50V,
di/dt=-100A/µs
80 120 ns
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 2
QW-R502-607.a
Datasheet pdf - http://www.DataSheet4U.co.kr/
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UTT50P10 mosfet
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