AP2310AGN-HF 반도체 회로 부품 판매점
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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 Advanced Power Electronics |
Advanced Power
Electronics Corp.
AP2310AGN-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
▼ RoHS Compliant & Halogen-Free
D
SOT-23 G
S
BVDSS
RDS(ON)
ID
Description
AP2310A series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The SOT-23 package with good thermal performance is widely preferred for
all commercial-industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch applications.
G
65V
80mΩ
3A
D
S
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Parameter
Drain-Source Voltage
www.DataSheet.co.kr
Gate-Source Voltage
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
65
+20
3
2.3
12
1.38
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
90
Unit
℃/W
1
201206111
Datasheet pdf - http://www.DataSheet4U.net/
AP2310AGN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=3A
VGS=4.5V, ID=2A
VDS=VGS, ID=250uA
VDS=10V, ID=3A
VDS=48V, VGS=0V
VGS=+20V, VDS=0V
ID=3A
VDS=30V
VGS=4.5V
VDS=30V
ID=1A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
www.DataSheet.co.kr
f=1.0MHz
65 - - V
- 62 80 mΩ
- 88 120 mΩ
1 1.7 3 V
-7-S
- - 25 uA
- - +100 nA
- 6 9.6 nC
- 1.5 - nC
- 3.5 - nC
- 5 - ns
- 6 - ns
- 17 - ns
- 3.5 - ns
- 460 740 pF
- 35 - pF
- 30 - pF
- 1.4 2.8 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1A, VGS=0V
IS=3A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 21 - ns
- 19 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
Datasheet pdf - http://www.DataSheet4U.net/
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제조업체: Advanced Power Electronics
( ape )
AP2310AGN-HF mosfet
데이터시트 다운로드 :
[ AP2310AGN-HF.PDF ]
[ AP2310AGN-HF 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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