DMP2069UFY4 반도체 회로 부품 판매점
P-CHANNEL ENHANCEMENT MODE MOSFET
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 Diodes |
Features
• Low On-Resistance
• 54mΩ @ VGS = -4.5V
• 69mΩ @ VGS = -2.5V
• 90mΩ @ VGS = -1.8V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• ESD Protected Up To 3kV
• "Green" Device, Halogen and Antimony Free (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
DMP2069UFY4
P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: DFN2015H4-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminals Connections: See Diagram Below
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
ESD PROTECTED TO 3kV
TOP VIEW
BOTTOM VIEW
S
D
G
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
TA = 25°C
TA = 70°C
www.DataSheet.co.kr
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±8
-2.5
-2.2
-12
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
0.53
231
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
Units
V
V
A
A
Unit
W
°C/W
°C
DMP2069UFY4
Document number: DS31949 Rev. 3 - 2
1 of 6
www.diodes.com
January 2010
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.net/
DMP2069UFY4
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
TJ = 25°C
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
SWITCHING CHARACTERISTICS (Note 6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
Min
-20
⎯
⎯
-0.3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
www.DataSheet.co.kr
Typ
⎯
⎯
⎯
-0.55
36
46
60
8
214
104
25
250
9.1
1.5
1.7
80.4
155.1
688.1
423.8
Max
⎯
-1.0
±10
-1.0
54
69
90
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -20V, VGS = 0V
μA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2.5A
mΩ VGS = -2.5V, ID = -2.2A
VGS = -1.8V, ID = -2.0A
S VDS = -5V, ID = -2.5A
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -10V, ID = -4A
nC
ns
ns VDS = -10V, VGS = -4.5V,
ns RD = 2.5Ω, RG = 3.0Ω
ns
20
VGS = 4.5V
VGS = 3.5V
VGS = 3.0V
15 VGS = 2.5V
VGS = 2.0V
10 VGS = 1.8V
5 VGS = 1.5V
VGS = 1.2V
0
0 1 2 3 45
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
20
VDS = 5V
15
10
5
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
0 TA = -55°C
0 0.5 1 1.5 2 2.5 3 3.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
4
DMP2069UFY4
Document number: DS31949 Rev. 3 - 2
2 of 6
www.diodes.com
January 2010
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.net/
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DMP2069UFY4 mosfet
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