SI7141DP 반도체 회로 부품 판매점
P-Channel 20-V (D-S) MOSFET
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 Vishay Siliconix |
www.DataSheet.co.kr
New Product
Si7141DP
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0019 at VGS = - 10 V
- 20
0.0030 at VGS = - 4.5 V
ID (A)
- 60d
- 60d
PowerPAK SO-8
Qg (Typ.)
128 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
6.15 mm
S
1S
5.15 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information: Si7141DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Adaptor Switch
• Battery Switch
• Load Switch
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)e, f
Limit
- 20
± 20
- 60d
- 60d
- 42.7b
- 34b
- 100
- 60d
- 5.6a, b
- 40
80
104
66.6
6.25a, b
4.0a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Case
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
15
0.9
Maximum
20
1.2
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 54 °C/W.
d. Package limited.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
www.vishay.com
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Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Si7141DP
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 25 A
VGS = - 4.5 V, ID = - 20 A
VDS = - 10 V, ID = - 25 A
Ciss
Coss
Crss
Qg
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 10 V, ID = - 20 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A
f = 1 MHz
VDD = - 10 V, RL = 1 Ω
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
VDD = - 10 V, RL = 1 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
Continous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 5 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 20
- 1.0
- 40
0.4
Typ.
Max.
Unit
- 16
5.7
0.0015
0.0024
103
- 2.3
± 100
-1
-5
0.0019
0.0030
V
mV/°C
V
nA
µA
A
Ω
S
14 300
2300
2600
265
128
36
42
1.7
25
16
130
38
130
120
100
55
400
194
3.4
50
30
220
70
220
200
180
100
pF
nC
Ω
ns
- 0.71
42
36
18
24
- 60
- 100
- 1.1
80
72
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
Datasheet pdf - http://www.DataSheet4U.net/
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SI7141DP mosfet
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