SFT1446 반도체 회로 부품 판매점
N-Channel Silicon MOSFET
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 Sanyo Semicon Device |
www.DataSheet.co.kr
Ordering number : ENA1742
SFT1446
SANYO Semiconductors
DATA SHEET
SFT1446
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• ON-resistance RDS(on)1=39mΩ(typ)
• 4V drive
• Input Capacitance Ciss=750pF(typ)
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
60
±20
20
80
1
23
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7518-004
6.5
5.0
4
2.3
0.5
Package Dimensions
unit : mm (typ)
7003-004
6.5
5.0
4
2.3
0.5
0.85
0.7
1.2
0.6
123
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
2.3 2.3
SANYO : TP
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251, SOT553
• Minimum Packing Quantity : 500 pcs./bag
Marking(TP, TP-FA)
T1446
LOT No.
0.85 0.5
123
0.6
2.3 2.3
0 t o 0.2
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
Product & Package Information
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252, SOT428
• Minimum Packing Quantity : 700 pcs./reel
Taping Type(TP-FA) : TL
TL
http://semicon.sanyo.com/en/network
60210PA TK IM TC-00002331 No. A1742-1/4
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Electrical Characteristics at Ta=25°C
SFT1446
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=10A
ID=10A, VGS=10V
ID=5A, VGS=4.5V
ID=5A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=14A
VDS=30V, VGS=10V, ID=14A
VDS=30V, VGS=10V, ID=14A
IS=20A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=30V
ID=10A
RL=3Ω
D VOUT
SFT1446
P.G 50Ω S
min
60
Ratings
typ
1.2
7.0
39
54
62
750
59
47
8.5
31
60
48
16
3.3
3.6
1.01
max
1
±10
2.6
51
76
87
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
20
Tc=25°C
18 Single pulse
ID -- VDS
4.5V
16 4.0V
14
12
10
3.5V
8
6
4 3.0V
2 VGS=2.5V
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS -- V IT15539
30
VDS=10V
Single pulse
25
ID -- VGS
20
15
10
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Gate-to-Source Voltage, VGS -- V IT15540
No. A1742-2/4
Datasheet pdf - http://www.DataSheet4U.net/
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SFT1446 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
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