SFS9926 반도체 회로 부품 판매점
Dual N-Channel MOSFET
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 SEMIWELL |
SemiWell Semiconductor
SFS9926
Dual N-Channel MOSFET
Features
■ Low RDS(on) (0.030Ω )@VGS=4.5V
Low RDS(on) (0.043Ω )@VGS=2.5V
■ Gate Charge (Typical 14nC)
■ Improved dv/dt Capability
■ Maximum Junction Temperature Range (150°C)
■ Available in Tape and Reel
General Description
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for Battery protection circuit, Load switch and other power
management application.
Symbol
D2 5
D2 6
D1 7
D1 8
4 G2
3 S2
2 G1
1 S1
8-SOIC
D1D1D2 D2
S1G1S2G2
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TA = 25°C)
Drain Current Pulsed
Gate to Source Voltage
Total Power Dissipation Single Operation (TA=25°C)
Total Power Dissipation Single Operation (TA=70°C)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient
(Note 4)
Min.
-
(Note 1)
Value
20
6.5
30
±12
2.0
1.28
- 55 ~ 150
300
Value
Typ.
-
Max.
62.5
Units
V
A
A
V
W
W
°C
°C
Units
°C/W
December, 2002. Rev. 0.
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/6
SFS9926
Electrical Characteristics ( TJ = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
Test Conditions
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
On Characteristics
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 16V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state
Resistance
Dynamic Characteristics
VDS = VGS, ID = 250uA
VGS = 4.5 V, ID = 6.5A
VGS = 2.5 V, ID = 5.4A
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Dynamic Characteristics
VGS =0 V, VDS =10V, f = 1MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge(Miller Charge)
VDD =10V, ID =1A, RG =50 Ω
VGS =4.5V
(Note 2,3)
VDS =10V, VGS =4.5V, ID =4.5A
(Note 2,3)
Min
20
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode Ratings and Characteristics
Symbol
IS
VSD
Parameter
Test Conditions
Maximum Continuous Diode Forward Current
Diode Forward Voltage
IS =1.3A, VGS =0V
(Note 2)
Min.
-
-
Typ Max Units
--V
24 - mV/°C
- 1 uA
100 nA
-
-100
nA
-
0.025
0.036
1.5
0.030
0.043
V
Ω
645 -
350 -
115 -
pF
9 28
45 100
95 200
60 130
14 18
2.5 -
5-
ns
nC
Typ.
-
-
Max.
1.3
1.2
Unit.
A
V
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
3. Essentially independent of operating temperature.
4. Surface mounted on 1 inch2 Cu board.
2/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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SFS9926 mosfet
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