19N10 반도체 회로 부품 판매점
N-CHANNEL POWER MOSFET
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 Unisonic Technologies |
UNISONIC TECHNOLOGIES CO., LTD
19N10
100V N-Channel MOSFET
DESCRIPTION
The UTC 100V N-Channel enhancement mode power field
effect transistors (MOSFET) are produced by UTC’s planar stripe,
DMOS technology which has been tailored especially in the
avalanche and commutation mode to minimize on-state resistance,
provide superior switching performance, and withstand high energy
pulse. They are suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and DC motor
control.
FEATURES
* RDS(ON) = 0.1Ω @VGS = 10 V
* Ultra low gate charge ( typical 19nC )
* Low reverse transfer Capacitance ( CRSS = typical 32pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
19N10L-T3P-T
19N10G-T3P-T
19N10L-TA3-T
19N10G-TA3-T
19N10L-TM3-T
19N10G-TM3-T
19N10L-TN3-R
19N10G-TN3-R
19N10L-TQ2-R
19N10G-TQ2-R
19N10L-TQ2-T
19N10G-TQ2-T
Package
TO-3P
TO-220
TO-251
TO-252
TO-263
TO-263
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-261.D
19N10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
100 V
± 25 V
Continuous Drain Current
ID 15.6 A
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
IDM 62.4 A
IAR 15.6 A
Single Pulsed Avalanche Energy (Note 3)
EAS
220 mJ
Repetitive Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 4)
EAR
dv/dt
5.0 mJ
6.0 V/ns
TO-251/TO-252
50 W
Power Dissipation
TO-220/TO-263
PD
62.5 W
TO-3P
178 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L=1.35mH, IAS=15.6A, VDD=25V, RG=25 Ω, Starting TJ=25°C
4. ISD≤19A, di/dt ≤ 300A/µs, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
TO-251/TO-252
Junction to Ambient
TO-220/TO-263
TO-3P
TO-251/TO-252
Junction to Case
TO-220/TO-263
TO-3P
SYMBOL
θJA
θJC
RATINGS
50
62.5
40
2.5
2.0
0.7
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
TEST CONDITIONS
BVDSS VGS=0V, ID=250µA
∆BVDSS/∆TJ
ID=250µA,
Referenced to 25°C
IDSS VDS=100V, VGS=0V
IGSS
VGS=25V, VDS=0V
VGS=-25V, VDS=0V
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=7.8A
VDS=40V, ID=7.8A (Note 1)
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0MHz
MIN TYP MAX UNIT
100 V
0.1 V/°C
1
100
-100
µA
nA
2.0
0.078
4.0
0.1
11
V
Ω
S
600 780
165 215
32 40
pF
pF
pF
www.DataSheet4U.com
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-261.D
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19N10 mosfet
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관련 데이터시트
19N10
N-CHANNEL POWER MOSFET - Unisonic Technologies
19N10V
100V N-Channel MOSFET - UNISONIC TECHNOLOGIES