NTZD3155C 반도체 회로 부품 판매점
Small Signal MOSFET
|
|
 ON Semiconductor |
NTZD3155C
Small Signal MOSFET
Complementary 20 V, 540 mA / -430 mA,
with ESD protection, SOT-563 package.
Features
•ăLeading Trench Technology for Low RDS(on) Performance
•ăHigh Efficiency System Performance
•ăLow Threshold Voltage
•ăESD Protected Gate
•ăSmall Footprint 1.6 x 1.6 mm
•ăThese are Pb-Free Devices
Applications
•ăDC-DC Conversion Circuits
•ăLoad/Power Switching with Level Shift
•ăSingle or Dual Cell Li-Ion Battery Operated Systems
•ăHigh Speed Circuits
•ăCell Phones, MP3s, Digital Cameras, and PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
N-Channel
Continuous Drain
Current (Note 1)
Steady
State
tv5s
P-Channel
Continuous Drain
Current (Note 1)
Steady
State
tv5s
Power Dissipation
(Note 1)
Steady
State
tv5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
TA = 25°C PD
20
±6
540
390
570
-430
-310
-455
250
280
V
V
mA
mW
Pulsed Drain Current N-Channel
P-Channel tp = 10 ms
IDM
1500
-750
mA
Operating Junction and Storage Temperature
TJ,
TSTG
-55 to
150
°C
Source Current (Body Diode)
IS 350 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL 260 °C
www.DSattraeSshseeest4eUxc.eceodming Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq [1 oz] including traces).
http://onsemi.com
V(BR)DSS
N-Channel
20 V
P-Channel
-20 V
RDS(on) Typ
0.4 W @ 4.5 V
0.5 W @ 2.5 V
0.7 W @ 1.8 V
0.5 W @ -4.5 V
0.6 W @ -2.5 V
1.0 W @ -1.8 V
ID Max
(Note 1)
540 mA
-430 mA
PINOUT: SOT-563
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
6
1
SOT-563-6
CASE 463A
MARKING
DIAGRAM
TW MĂG
G
TW = Specific Device Code
M = Date Code
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTZD3155CT1G SOT-563 4000 / Tape & Reel
(Pb-Free)
NTZD3155CT2G SOT-563 4000 / Tape & Reel
(Pb-Free)
NTZD3155CT5G SOT-563 8000 / Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 2
1
Publication Order Number:
NTZD3155C/D
NTZD3155C
Thermal Resistance Ratings
Parameter
Symbol
Max
Junction-to-Ambient – Steady State (Note 2)
Junction-to-Ambient – t = 5 s (Note 2)
RqJA
500
447
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol N/P
Test Condition
Min
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage V(BR)DSS
Drain-to-Source Breakdown Voltage V(BR)DSS/TJ
Temperature Coefficient
N
P
VGS = 0 V
ID = 250 mA
ID = -250 mA
20
-20
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
IDSS
IGSS
N VGS = 0 V, VDS = 16 V
TJ = 25°C
P VGS = 0 V, VDS= -16 V
N VGS = 0 V, VDS = 16 V TJ = 125°C
P VGS = 0 V, VDS= - 16V
P VDS = 0 V, VGS = ±4.5 V
N
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Gate Threshold
Temperature Coefficient
VGS(TH)
VGS(TH)/TJ
N
P
VGS = VDS
ID = 250 mA 0.45
ID = -250 mA -0.45
Drain-to-Source On Resistance
RDS(on)
N
P
N
P
N
P
Forward Transconductance
gFS N
P
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 4.5 V, ID = 540 mA
VGS = -4.5V , ID = -430 mA
VGS = 2.5 V, ID = 500 mA
VGS = -2.5V , ID = -300 mA
VGS = 1.8 V, ID = 350 mA
VGS = -1.8V , ID = -150 mA
VDS = 10 V, ID = 540 mA
VDS = -10 V, ID = -430 mA
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
www.Da3ta. SPhueleset4TUe.scto: pmulse width v300 ms, duty cycle v2%
N
P
f = 1 MHz, VGS = 0 V
VDS = 16 V
f = 1 MHz, VGS = 0 V
VDS = -16 V
Typ Max Unit
V
18 mV/°C
1.0
-1.0
2.0
-5.0
$2.0
$5.0
mA
mA
mA
1.0 V
-1.0
-1.9 -mV/ °C
0.4 0.55
0.5 0.9
0.5 0.7
0.6 1.2
0.7 0.9
1.0 2.0
1.0
1.0
W
S
80 150
13 25
10 20
105 175
15 30
10 20
pF
http://onsemi.com
2
|
PDF 파일 내의 페이지 : 총 8 페이지
제조업체: ON Semiconductor
( onsemi )
NTZD3155C mosfet
데이터시트 다운로드 :
[ NTZD3155C.PDF ]
[ NTZD3155C 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
