MRF150 반도체 회로 부품 판매점
SILICON RF POWER MOSFET
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 Advanced Semiconductor |
MRF150
SILICON RF POWER MOSFET
DESCRIPTION:
The MRF150 is an N-Channel
Enhancement-Mode MOS Broadband
RF Ppwer Transistor Designed for
Wideband Large Signal Amplifier
Applications From 2.0 to 150 MHz.
MAXIMUM RATINGS
ID
VDSS
16 A
125 V
VGS
PDISS
TJ
TSTG
θJC
± 40 V
300 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
10 OC/W
PACKAGE STYLE .500 4L FLG
.112x45°
L
A
S
FULL R
D
C
B
G
S
E
H
D
G
F
Ø.125 NOM.
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .220 / 5.59
.230 / 5.84
B .125 / 3.18
C .245 / 6.22
.255 / 6.48
D .720 / 18.28
.7.30 / 18.54
E .125 / 3.18
F .970 / 24.64
.980 / 24.89
G .495 / 12.57
.505 / 12.83
H .003 / 0.08
.007 / 0.18
I .090 / 2.29
.110 / 2.79
J .150 / 3.81
.175 / 4.45
K .280 / 7.11
L .980 / 24.89
1.050 / 26.67
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
V(BR)DSS
ID = 100 mA
VGS = 0 V
IDSS
VDSS = 50 V
VGS = 0 V
IGSS VGS = 20 V VDS = 0 V
VGS(th)
VDS = 10 V
ID = 100 mA
gfs
VDS = 10 V
ID = 100 mA
MINIMUM TYPICAL MAXIMUM
125
5.0
1.0
1.0 5.0
4
UNITS
V
mA
µA
V
mho
Ciss
Coss
Crss
VDS = 50 V
VGS = 0 V
f = 1.0 MHz
350
250
50
pF
Gps
VDD = 50 V
IDQ = 250 mA Pout = 150 W (PEP)
45
η Fo = 30 & 30.001 MHz
17.0
50
dB
%
ψ VSWR = 30:1 AT ALL PHASE ANGLES
NO DEGRADRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
DataSheet4U
REV. A
1/1
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제조업체: Advanced Semiconductor
( advanced )
MRF150 mosfet
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[ MRF150.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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