FDP7N50F 반도체 회로 부품 판매점
N-Channel MOSFET
|
|
 Fairchild Semiconductor |
FDP7N50F / FDPF7N50F
N-Channel MOSFET, FRFET
500V, 6A, 1.15Ω
Features
• RDS(on) = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A
• Low gate charge ( Typ. 15nC)
• Low Crss ( Typ. 6.3pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
November 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP7N50F FDPF7N50F
500
±30
6 6*
3.6 3.6*
24 24*
270
6
20
4.5
200 38.5
1.59 0.3
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDP7N50F
1.4
0.5
62.5
FDPF7N50F
4.0
-
62.5
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDP7N50F / FDPF7N50F Rev. A
1
www.fairchildsemi.com
www.DataSheet.in
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP7N50F
Device
FDP7N50F
Package
TO-220
Reel Size
-
Tape Width
-
FDPF7N50F
FDPF7N50F
TO-220F
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Off Characteristics
BVDSS
∆BVDSS
∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
Test Conditions
Min.
ID = 250µA, VGS = 0V, TJ = 25oC
ID = 250µA, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±30V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 3A
VDS = 40V, ID = 3A
(Note 4)
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 6A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 6A
RG = 25Ω
(Note 4, 5)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 6A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 6A
dIF/dt = 100A/µs
(Note 4)
-
-
-
-
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 13mH, IAS = 6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Typ.
-
0.5
-
-
-
-
0.95
4.3
720
85
6.3
15
4.5
6
17
30
35
20
-
-
-
85
0.15
Max. Units
-
-
10
100
±100
V
V/oC
µA
nA
5.0 V
1.15 Ω
-S
960 pF
115 pF
10 pF
20 nC
- nC
- nC
45 ns
70 ns
80 ns
50 ns
6A
24 A
1.5 V
- ns
- µC
FDP7N50F / FDPF7N50F Rev. A
www.DataSheet.in
2 www.fairchildsemi.com
|
PDF 파일 내의 페이지 : 총 9 페이지
제조업체: Fairchild Semiconductor
( fairchild )
FDP7N50F mosfet
데이터시트 다운로드 :
[ FDP7N50F.PDF ]
[ FDP7N50F 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
FDP7N50
N-Channel MOSFET - Fairchild Semiconductor
FDP7N50F
N-Channel MOSFET - Fairchild Semiconductor
FDP7N50U
N-Channel MOSFET - Fairchild Semiconductor