IRHNM597110 반도체 회로 부품 판매점
RADIATION HARDENED POWER MOSFET SURFACE MOUNT
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 International Rectifier |
PD-97179A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.2)
Product Summary
Part Number Radiation Level
IRHNM597110 100K Rads (Si)
IRHNM593110 300K Rads (Si)
RDS(on)
1.2Ω
1.2Ω
ID
-3.1A
-3.1A
IRHNM597110
100V, P-CHANNEL
5 TECHNOLOGY
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Absolute Maximum Ratings
ID@ VGS = -12V, TC = 25°C
ID@ VGS = -12V, TC =100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
SMD-0.2
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Pre-Irradiation
Units
-3.1
-2.0 A
-12.4
23 W
0.18
W/°C
±20 V
28 mJ
-3.1 A
2.3 mJ
-21 V/ns
-55 to 150
°C
300 (for 5s)
0.25 (Typical)
g
1
12/20/07
www.DataSheet.in
IRHNM597110
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage -100
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
—
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
-2.0
—
1.9
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
Typ Max Units
——
V
-0.13 — V/°C
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
— 1.2 Ω
VGS = -12V, ID = -2.0A Ã
—
4.88
—
—
—
—
—
—
—
—
—
—
—
—
6.8
379
98
9.5
24
-4.0 V
— mV/°C
VDS = VGS, ID = -1.0mA
—S
-10
-25
µA
-100
100
11
3.0
4.0
nA
nC
VDS = -15V, IDS = -2.0A Ã
VDS= -80V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -3.1A
VDS = -50V
18
26 ns
12
VDD = -50V, ID = -3.1A,
VGS = -12V, RG = 7.5Ω
12
— nH Measured from the center of
drain pad to center of source pad
—
— pF
VGS = 0V, VDS = -25V
f = 100KHz
—
Ω f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) À
—
—
— -3.1
— -12.4
A
VSD Diode Forward Voltage
— — -5.0 V
Tj = 25°C, IS = -3.1A, VGS = 0V Ã
trr Reverse Recovery Time
— — 100 ns Tj = 25°C, IF = -3.1A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge
— — 271 nC
VDD ≤ -50V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 5.4 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier website.
For footnotes refer to the last page
2 www.irf.com
www.DataSheet.in
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IRHNM597110 mosfet
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