RP1E050RP 반도체 회로 부품 판매점
4V Drive Pch MOSFET
|
|
 ROHM Semiconductor |
www.DataSheet4U.com
4V Drive Pch MOSFET
RP1E050RP
Structure
Silicon P-channel MOSFET
Features
1) Low On-resistance.
2) High power package.
3) 4V drive.
Dimensions (Unit : mm)
MPT6
(6) (5) (4)
(1) (2) (3)
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RP1E050RP
Taping
TR
1000
○
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
30
VGSS
20
ID 5
IDP *1
IS
20
1.6
ISP *1
20
PD *2
2.0
Tch 150
Tstg 55 to +150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(6) (5)
(4)
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
∗2
∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
62.5
Unit
C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.04 - Rev.A
RP1E050RP
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
IGSS
V(BR)DSS
IDSS
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transistor admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
Min.
-
30
-
1.0
-
-
-
4
-
-
-
-
-
-
-
-
-
-
Data Sheet
www.DataSheet4U.com
Typ.
-
-
-
-
36
52
58
-
850
120
120
9
25
55
30
9.2
2.4
3.6
Max.
10
-
1
2.5
50
72
80
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=30V, VGS=0V
V VDS=10V, ID=1mA
ID=5A, VGS=10V
m ID=2.5A, VGS=4.5V
ID=2.5A, VGS=4.0V
S ID=5A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=2.5A, VDD 15V
ns VGS=10V
ns RL=6.0
ns RG=10
nC ID=5A, VDD 15V
nC VGS=5V RL=3.0
nC RG=10
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max. Unit
Conditions
1.2
V Is=5A, VGS=0V
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.04- Rev.A
|
PDF 파일 내의 페이지 : 총 6 페이지
제조업체: ROHM Semiconductor
( rohm )
RP1E050RP mosfet
데이터시트 다운로드 :
[ RP1E050RP.PDF ]
[ RP1E050RP 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
