RP1A090ZP 반도체 회로 부품 판매점
1.5V Drive Pch MOSFET
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 ROHM Semiconductor |
www.DataSheet4U.com
1.5V Drive Pch MOSFET
RP1A090ZP
Structure
Silicon P-channel MOSFET
Features
1) Low Voltage Drive(1.5V drive).
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
Application
Switching
Dimensions (Unit : mm)
MPT6
(6) (5) (4)
(1) (2) (3)
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RP1A090ZP
Taping
TR
1000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
12
10
9
36
1.6
36
2.0
150
55 to +150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(6) (5)
(4)
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
∗2
∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
62.5
Unit
C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.04 - Rev.A
RP1A090ZP
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
IGSS
V(BR)DSS
IDSS
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
Min.
-
12
-
0.3
-
-
-
-
12
-
-
-
-
-
-
-
-
-
-
Data Sheet
www.DataSheet4U.com
Typ.
-
-
-
-
8
11
15
19
-
7400
800
750
35
120
350
170
59
11
9
Max.
10
-
1
1.0
12
16
23
38
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=10V, VDS=0V
V ID=1mA, VGS=0V
A VDS=12V, VGS=0V
V VDS=6V, ID=1mA
ID=9A, VGS=4.5V
m ID=4.5A, VGS=2.5V
ID=4.5A, VGS=1.8V
ID=1.8A, VGS=1.5V
S ID=9A, VDS=6V
pF VDS=6V
pF VGS=0V
pF f=1MHz
ns ID=4.5A, VDD 6V
ns VGS=4.5V
ns RL=1.3
ns RG=10
nC ID=9A,
nC VGS=4.5V
nC VDD 6V
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
-
Typ.
-
*Pulsed
Max. Unit
Conditions
1.2
V Is=9A, VGS=0V
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.04 - Rev.A
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RP1A090ZP mosfet
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