DMN26D0UDJ 반도체 회로 부품 판매점
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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 Diodes |
Features
• Dual N-Channel MOSFET
• Low On-Resistance:
• 3.0 Ω @ 4.5V
• 4.0 Ω @ 2.5V
• 6.0 Ω @ 1.8V
• 10 Ω @ 1.5V
• Very Low Gate Threshold Voltage, 1.0V max
• Low Input Capacitance
• Fast Switching Speed
• Ultra-Small Surface Mount Package
• ESD Protected Gate (HBM 300V)
• Lead, Halogen, and Antimony Free By Design/RoHS
Compliant (Note 2)
• "Green" Device (Note 3)
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DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT-963
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.0027 grams (approximate)
SOT-963
D1 G2 S2
ESD PROTECTED
TOP VIEW
S1 G1 D2
TOP VIEW
Schematic and Transistor Diagram
Maximum Ratings @TA = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current
Characteristic
TP = 10µs
Symbol
VDSS
VGSS
ID
IDM
Value
20
±10
230
805
Unit
V
V
mA
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
PD
RθJA
TJ, TSTG
300
417
-55 to +150
mW
°C/W
°C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN26D0UDJ
Document number: DS31481 Rev. 4 - 2
1 of 5
www.diodes.com
May 2010
© Diodes Incorporated
wwDwM.DaNta2Sh6eeDt4U0.cUomDJ
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ TC = 25°C
Symbol Min
BVDSS
IDSS
20
⎯
Gate-Body Leakage
IGSS
⎯
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS, VGS = 4.5V (Note 5)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
0.5
⎯
⎯
⎯
⎯
⎯
0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Notes:
4. Short duration pulse test used to minimize self-heating effect.
5. Switching characteristics are independent of operating junction temperature.
Typ
⎯
⎯
⎯
⎯
1.8
2.4
2.9
3.7
242
⎯
14.1
2.9
1.6
3.8
7.9
13.4
15.2
Max
⎯
500
±1
±500
±100
1.0
3.0
4.0
6.0
10.0
⎯
1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit Test Condition
V VGS = 0V, ID = 100μA
nA VDS = 20V, VGS = 0V
μA VGS = ±10V, VDS = 0V
nA VGS = ±8V, VDS = 0V
nA VGS = ±5V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 100mA
Ω VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
mS VDS =10V, ID = 0.1A
V VGS = 0V, IS = 115mA
pF
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
pF
ns
VGS = 4.5V, VDD = 10V
ID = 200mA, RG = 2.0Ω
0.8
0.7 VGS = 8V
0.6
0.5
VGS = 4.5V
VGS = 3.0V
0.4 VGS = 2.5V
0.3
VGS = 2.0V
0.2
0.1
0
0
VGS = 1.5V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
3
0.4
VDS = -10V
0.3
0.2
0.1
TA = -55°C
TA = 25°C
TA = 85°C
TA = 125°C
TA = 150°C
0
0 0.5 1 1.5 2 2.5 3
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMN26D0UDJ
Document number: DS31481 Rev. 4 - 2
2 of 5
www.diodes.com
May 2010
© Diodes Incorporated
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DMN26D0UDJ mosfet
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